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铁磁范德华CrTe中的巨反常霍尔效应

Colossal Anomalous Hall Effect in Ferromagnetic van der Waals CrTe.

作者信息

Huang Meng, Wang Shanshan, Wang Zhaohao, Liu Ping, Xiang Junxiang, Feng Chao, Wang Xiangqi, Zhang Zengming, Wen Zhenchao, Xu Hongjun, Yu Guoqiang, Lu Yalin, Zhao Weisheng, Yang Shengyuan A, Hou Dazhi, Xiang Bin

机构信息

Hefei National Research Center for Physical Sciences at the Microscale, International Centre for Quantum Design of Functional Materials, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, China.

School of Physics, Southeast University, Nanjing 211189, China.

出版信息

ACS Nano. 2021 Jun 22;15(6):9759-9763. doi: 10.1021/acsnano.1c00488. Epub 2021 Apr 21.

Abstract

van der Waals crystals exhibit excellent material performance when exfoliated to few-atomic-layer thickness. In contrast, the van der Waals thin films more than 10 nm thick are believed to show bulk properties, in which outstanding material performance is rarely found. Here we report the largest anomalous Hall conductivity observed so far in a 170 nm van der Waals ferromagnetic 1-CrTe flake, which reaches 67,000 Ω cm. Such a colossal anomalous Hall conductivity in 1-CrTe is dominated by the extrinsic skew scattering process rather than the intrinsic Berry phase effect, as evidenced by the linear relation between the anomalous Hall conductivity and the longitudinal conductivity. Defying the dilemma of mutually exclusive large anomalous Hall angle and high electric conductivity for most ferromagnets, 1-CrTe achieves both in a thin film sample. Considering the shared physics of the anomalous Hall effect and the spin Hall effect, our finding offers a guideline for searching large spin Hall materials of high conductivity which may overcome the bottleneck of overheating in spintronics devices.

摘要

范德华晶体在剥离成几个原子层厚度时表现出优异的材料性能。相比之下,厚度超过10纳米的范德华薄膜被认为表现出体材料特性,其中很少能发现优异的材料性能。在此,我们报告了迄今为止在一片170纳米厚的范德华铁磁体1-CrTe薄片中观测到的最大反常霍尔电导率,其达到67000Ω·cm。1-CrTe中如此巨大的反常霍尔电导率由外在的斜散射过程主导,而非本征的贝里相位效应,反常霍尔电导率与纵向电导率之间的线性关系证明了这一点。1-CrTe突破了大多数铁磁体中反常霍尔角大与电导率高相互排斥的困境,在一个薄膜样品中同时实现了这两点。考虑到反常霍尔效应和自旋霍尔效应的共同物理机制,我们的发现为寻找高电导率的大自旋霍尔材料提供了指导方针,这可能会克服自旋电子器件中的过热瓶颈。

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