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层状反铁磁EuAlSi化合物中的巨反常霍尔效应。

Colossal anomalous Hall effect in the layered antiferromagnetic EuAlSi compound.

作者信息

Chen Jie, Yang Xiuxian, Zhou Feng, Lau Yong-Chang, Feng Wanxiang, Yao Yugui, Li Yue, Jiang Yong, Wang Wenhong

机构信息

School of Electronic and Information Engineering, Tiangong University, Tianjin 300387, China.

Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.

出版信息

Mater Horiz. 2024 Sep 30;11(19):4665-4673. doi: 10.1039/d4mh00480a.

Abstract

The anomalous Hall effect (AHE), significantly enhanced by the extrinsic mechanism, has attracted attention for its almost unlimited Hall response, which exceeds the upper limit of the Berry curvature mechanism. However, due to the high conductivity in the clean regime and weak skew scattering, it is a great challenge to obtain large anomalous Hall conductivities and large anomalous Hall angles at the same time. Here, we unveil a new magnetic metal system, EuAlSi, which hosts both colossal anomalous Hall conductivity (Axy ≥ 10 Ω cm) and large anomalous Hall angle (AHA >10%). The scaling relation suggests that the skew scattering mechanism is dominant in the colossal anomalous Hall response and gives rise to a large skew scattering constant. The large effective SOC and large magnetic moment may account for this anomaly. Our results indicate that EuAlSi is a good platform to study the extrinsic AHE mechanism.

摘要

由外在机制显著增强的反常霍尔效应(AHE),因其几乎不受限制的霍尔响应(超过了贝里曲率机制的上限)而备受关注。然而,由于在清洁体系中的高电导率和较弱的斜散射,要同时获得大的反常霍尔电导率和大的反常霍尔角是一项巨大的挑战。在此,我们揭示了一种新的磁性金属体系EuAlSi,它兼具巨大的反常霍尔电导率(Axy≥10Ω·cm)和大的反常霍尔角(AHA>10%)。标度关系表明,斜散射机制在巨大的反常霍尔响应中占主导地位,并产生了一个大的斜散射常数。大的有效自旋轨道耦合(SOC)和大的磁矩可能是这种反常现象的原因。我们的结果表明,EuAlSi是研究外在反常霍尔效应机制的一个良好平台。

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