Dung Dang Duc, Lam Nguyen Huu, Nguyen Anh Duc, Trung Nguyen Ngoc, Van Duc Nguyen, Hung Nguyen The, Kim Yong Soo, Odkhuu Dorj
School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi, Viet Nam.
Department of Physics, University of Ulsan, Ulsan, 680-749, Republic of Korea.
Sci Rep. 2021 Apr 26;11(1):8908. doi: 10.1038/s41598-021-88377-3.
New solid solution of NaBiTiO with BaFeO materials were fabricated by sol-gel method. Analysis of X-ray diffraction patterns indicated that BaFeO materials existed as a well solid solution and resulted in distortion the structure of host NaBiTiO materials. The randomly incorporated Fe and Ba cations in the host NaBiTiO crystal decreased the optical band gap from 3.11 to 2.48 eV, and induced the room-temperature ferromagnetism. Our density-functional theory calculations further suggested that both Ba for Bi/Na-site and Fe dopant, regardless of the substitutional sites, in NaBiTiO lead to the induced magnetism, which is illustrated in terms of the exchange splitting between spin subbands through the crystal field theory and Jahn-Teller distortion effects. Our work proposes a simple method for fabricating lead-free ferroelectric materials with ferromagnetism property for multifunctional applications in smart electronic devices.
采用溶胶-凝胶法制备了NaBiTiO与BaFeO材料的新型固溶体。X射线衍射图谱分析表明,BaFeO材料以良好的固溶体形式存在,并导致主体NaBiTiO材料的结构发生畸变。主体NaBiTiO晶体中随机掺入的Fe和Ba阳离子使光学带隙从3.11 eV降低到2.48 eV,并诱导出室温铁磁性。我们的密度泛函理论计算进一步表明,在NaBiTiO中,Bi/Na位的Ba和Fe掺杂剂,无论取代位置如何,都会导致诱导磁性,这通过晶体场理论和 Jahn-Teller 畸变效应在自旋子带之间的交换分裂来解释。我们的工作提出了一种简单的方法来制备具有铁磁性的无铅铁电材料,用于智能电子设备中的多功能应用。