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BaLnMnTe(Ln = Pr、Gd和Yb;x = Ln空位):合成、晶体结构、光学性质、电阻率及电子结构

BaLnMnTe (Ln = Pr, Gd, and Yb; x = Ln vacancy): syntheses, crystal structures, optical, resistivity, and electronic structure.

作者信息

Panigrahi Gopabandhu, Jana Subhendu, Ishtiyak Mohd, Narayanswamy S, Bhattacharjee Pinaki P, Ramanujachary K V, Niranjan Manish K, Prakash Jai

机构信息

Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India.

出版信息

Dalton Trans. 2021 May 21;50(19):6688-6701. doi: 10.1039/d1dt00057h. Epub 2021 Apr 28.

DOI:10.1039/d1dt00057h
PMID:33908515
Abstract

Three new isostructural quaternary tellurides, BaLnMnTe (Ln = Pr, Gd, and Yb), have been synthesized by the molten-flux method at 1273 K. The single-crystal X-ray diffraction studies at 298(2) K showed that BaLnMnTe crystallize in the space group -C2/m of the monoclinic crystal system. There are six unique crystallographic sites in this structure's asymmetric unit: one Ba site, one Ln site, one Mn site, and three Te sites. The Ln site in the BaLnMnTe structure is partially filled, which leaves about one-third of the Ln sites vacant (□) for Pr and Gd compounds. These structures do not contain any homoatomic or metallic bonding and can be charge-balanced as (Ba)(Gd/Pr)(Mn)(Te). The refined composition for the Yb compound is BaYbMnTe and can be charge-balanced with a mixed valence state of Yb/Yb. The crystal structures of BaLnMnTe consist of complex layers of [LnMnTe] stacked along the [100] direction, with Ba cations separating these layers. The Ln atoms are bound to six Te atoms that form a distorted octahedral geometry around the central Ln atom. Each Mn atom in this structure is coordinated to four Te atoms in a distorted tetrahedral fashion. These LnTe and MnTe units are the main building blocks of the BaLnMnTe structure. The optical absorption study performed on a polycrystalline BaGdMnTe sample reveals a direct bandgap of 1.06(2) eV consistent with the DFT study. A semiconducting behavior was also observed for polycrystalline BaGdMnTe from the resistivity study. The temperature-dependent magnetic studies on a polycrystalline sample of BaGdMnTe did not reveal any long-range magnetic order down to 5 K. The effective magnetic moment (μ) of 10.37μ calculated using the Curie-Weiss law is in good agreement with the theoretical value (μ) of 10.58μ.

摘要

通过熔剂法在1273 K下合成了三种新的同构四元碲化物BaLnMnTe(Ln = Pr、Gd和Yb)。在298(2) K下进行的单晶X射线衍射研究表明,BaLnMnTe属于单斜晶系的-C2/m空间群。该结构的不对称单元中有六个独特的晶体学位置:一个Ba位置、一个Ln位置、一个Mn位置和三个Te位置。BaLnMnTe结构中的Ln位置部分填充,对于Pr和Gd化合物,约三分之一的Ln位置为空位(□)。这些结构不包含任何同原子键或金属键,并且可以电荷平衡为(Ba)(Gd/Pr)(Mn)(Te)。Yb化合物的精确组成为BaYbMnTe,并且可以通过Yb/Yb的混合价态实现电荷平衡。BaLnMnTe的晶体结构由沿[100]方向堆叠的[LnMnTe]复杂层组成,Ba阳离子将这些层隔开。Ln原子与六个Te原子键合,这些Te原子在中心Ln原子周围形成扭曲的八面体几何结构。该结构中的每个Mn原子以扭曲的四面体方式与四个Te原子配位。这些LnTe和MnTe单元是BaLnMnTe结构的主要构建块。对多晶BaGdMnTe样品进行的光吸收研究表明,其直接带隙为1.06(2) eV,与密度泛函理论(DFT)研究结果一致。从电阻率研究中还观察到多晶BaGdMnTe具有半导体行为。对BaGdMnTe多晶样品进行的温度依赖性磁性研究表明,在低至5 K时未发现任何长程磁有序。使用居里-外斯定律计算得到的有效磁矩(μ)为10.37μB,与理论值10.58μB吻合良好。

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