Zou Zhengmiao, Tian Guo, Wang Dao, Zhang Yan, Wang Jiali, Li Yushan, Tao Ruiqiang, Fan Zhen, Chen Deyang, Zeng Min, Gao Xingsen, Dai Ji-Yan, Lu Xubing, Liu J-M
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China.
Nanotechnology. 2021 May 26;32(33). doi: 10.1088/1361-6528/abfc70.
By adoption of a high permittivity ZrOcapping layer (ZOCL), enhanced ferroelectric properties were achieved in the HfZrO(HZO) thin films. For HZO thin film with 10 Å ZOCL, the 2value can reach as high as ∼43.1C cmunder a sweep electric field of 3 MV cm. In addition, a reduced coercive field of 1.5 MV cmwas observed, which is comparable to that of HZO with metallic CL. Furthermore, the homogeneity of ferroelectric orthorhombic phase in HZO films was observed to be clearly increased, as evidenced by nanoscale piezoelectric force microscopy measurements. These results demonstrate that ZOCL is very favorable for high performance ferroelectric HZO films and their future device applications.
通过采用高介电常数的ZrO盖帽层（ZOCL），在HfZrO（HZO）薄膜中实现了增强的铁电性能。对于具有10 Å ZOCL的HZO薄膜，在3 MV/cm的扫描电场下，2值可高达约43.1 C/cm²。此外，观察到矫顽场降低至1.5 MV/cm，这与具有金属盖帽层的HZO相当。此外，通过纳米级压电力显微镜测量证明，HZO薄膜中铁电正交相的均匀性明显增加。这些结果表明，ZOCL对于高性能铁电HZO薄膜及其未来的器件应用非常有利。
