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最大化基于氧化锌纳米线的换能器压电响应的尺寸路线图:生长方法的影响

Dimensional Roadmap for Maximizing the Piezoelectrical Response of ZnO Nanowire-Based Transducers: Impact of Growth Method.

作者信息

Lopez Garcia Andrés Jenaro, Mouis Mireille, Consonni Vincent, Ardila Gustavo

机构信息

University Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LaHC, F-38000 Grenoble, France.

University Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France.

出版信息

Nanomaterials (Basel). 2021 Apr 7;11(4):941. doi: 10.3390/nano11040941.

DOI:10.3390/nano11040941
PMID:33917136
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8067815/
Abstract

ZnO nanowires are excellent candidates for energy harvesters, mechanical sensors, piezotronic and piezophototronic devices. The key parameters governing the general performance of the integrated devices include the dimensions of the ZnO nanowires used, their doping level, and surface trap density. However, although the method used to grow these nanowires has a strong impact on these parameters, its influence on the performance of the devices has been neither elucidated nor optimized yet. In this paper, we implement numerical simulations based on the finite element method combining the mechanical, piezoelectric, and semiconducting characteristic of the devices to reveal the influence of the growth method of ZnO nanowires. The electrical response of vertically integrated piezoelectric nanogenerators (VING) based on ZnO nanowire arrays operating in compression mode is investigated in detail. The properties of ZnO nanowires grown by the most widely used methods are taken into account on the basis of a thorough and comprehensive analysis of the experimental data found in the literature. Our results show that the performance of VING devices should be drastically affected by growth method. Important optimization guidelines are found. In particular, the optimal nanowire radius that would lead to best device performance is deduced for each growth method.

摘要

氧化锌纳米线是能量收集器、机械传感器、压电电子和压电光电器件的理想候选材料。决定集成器件整体性能的关键参数包括所用氧化锌纳米线的尺寸、掺杂水平和表面陷阱密度。然而,尽管用于生长这些纳米线的方法对这些参数有很大影响,但其对器件性能的影响尚未得到阐明和优化。在本文中,我们基于有限元方法进行数值模拟,结合器件的机械、压电和半导体特性,以揭示氧化锌纳米线生长方法的影响。详细研究了基于氧化锌纳米线阵列、工作在压缩模式下的垂直集成压电纳米发电机(VING)的电响应。在对文献中实验数据进行全面深入分析的基础上,考虑了通过最常用方法生长的氧化锌纳米线的特性。我们的结果表明,VING器件的性能应会受到生长方法的显著影响。找到了重要的优化指导原则。特别是,针对每种生长方法推导了能使器件性能达到最佳的最佳纳米线半径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/2ad30e5f5487/nanomaterials-11-00941-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/c68058dfb68c/nanomaterials-11-00941-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/281e11ba3ed9/nanomaterials-11-00941-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/d437e8c8e039/nanomaterials-11-00941-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/55b4a0fb81cd/nanomaterials-11-00941-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/c075a7c5b797/nanomaterials-11-00941-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/f0d60e4e5be6/nanomaterials-11-00941-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/799d85e38ea2/nanomaterials-11-00941-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/2ad30e5f5487/nanomaterials-11-00941-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/c68058dfb68c/nanomaterials-11-00941-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/281e11ba3ed9/nanomaterials-11-00941-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/d437e8c8e039/nanomaterials-11-00941-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/55b4a0fb81cd/nanomaterials-11-00941-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/c075a7c5b797/nanomaterials-11-00941-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/f0d60e4e5be6/nanomaterials-11-00941-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/799d85e38ea2/nanomaterials-11-00941-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf0e/8067815/2ad30e5f5487/nanomaterials-11-00941-g008.jpg

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