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SRO-HFCVD 薄膜中的蓝色电致发光

Blue Electroluminescence in SRO-HFCVD Films.

作者信息

Martínez Haydee P, Luna José A, Morales Roberto, Casco José F, Hernández José A D, Luna Adan, Hernández Zaira J, Mendoza Gabriel, Monfil Karim, Ramírez Raquel, Carrillo Jesús, Flores Javier

机构信息

Departamento de Ingeniería Eléctrica y Electrónica, Tecnológico Nacional de México/Instituto Tecnológico de Apizaco Carretera Apizaco-Tzompantepec, Esquina con Av. Instituto Tecnológico S/N. Conurbado Apizaco-Tzompantepec, Apizaco 90300, Mexico.

Centro de Investigación en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla 72570, Mexico.

出版信息

Nanomaterials (Basel). 2021 Apr 8;11(4):943. doi: 10.3390/nano11040943.

DOI:10.3390/nano11040943
PMID:33917685
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8067983/
Abstract

In this work, electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM)-type structures was studied. These structures were fabricated with single- and double-layer silicon-rich-oxide (SRO) films by means of Hot Filament Chemical Vapor Deposition (HFCVD), gold and indium tin oxide (ITO) were used on silicon and quartz substrates as a back and front contact, respectively. The thickness, refractive indices, and excess silicon of the SRO films were analyzed. The behavior of the MIS and MIM-type structures and the effects of the pristine current-voltage (I-V) curves with high and low conduction states are presented. The structures exhibit different conduction mechanisms as the Ohmic, Poole-Frenkel, Fowler-Nordheim, and Hopping that contribute to carrier transport in the SRO films. These conduction mechanisms are related to the electroluminescence spectra obtained from the MIS and MIM-like structures with SRO films. The electroluminescence present in these structures has shown bright dots in the low current of 36 uA with a voltage of -20 V to -50 V. However, when applied voltages greater than -67 V with 270 uA, a full area with uniform blue light emission is shown.

摘要

在这项工作中，对金属 - 绝缘体 - 半导体（MIS）和金属 - 绝缘体 - 金属（MIM）型结构中的电致发光进行了研究。这些结构是通过热丝化学气相沉积（HFCVD）用单层和双层富硅氧化物（SRO）薄膜制造的，在硅和石英衬底上分别使用金和氧化铟锡（ITO）作为背接触和前接触。分析了SRO薄膜的厚度、折射率和过剩硅。展示了MIS和MIM型结构的行为以及具有高传导态和低传导态的原始电流 - 电压（I - V）曲线的影响。这些结构表现出不同的传导机制，如欧姆、普尔 - 弗伦克尔、福勒 - 诺德海姆和跳跃传导机制，它们有助于SRO薄膜中的载流子传输。这些传导机制与从具有SRO薄膜的MIS和类MIM结构获得的电致发光光谱有关。这些结构中存在的电致发光在36 μA的低电流、 - 20 V至 - 50 V的电压下显示出亮点。然而，当在270 μA的电流下施加高于 - 67 V的电压时，会显示出一个发出均匀蓝光的全区域。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/035dce6a6fd0/nanomaterials-11-00943-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/5d7748e0c5eb/nanomaterials-11-00943-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/c921873ba031/nanomaterials-11-00943-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/ae4f0ecf715a/nanomaterials-11-00943-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/eca4dd42123d/nanomaterials-11-00943-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/7f9fbb896135/nanomaterials-11-00943-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/26e8f47cc047/nanomaterials-11-00943-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/e838bdcdefb3/nanomaterials-11-00943-g007a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/b9d25596f24a/nanomaterials-11-00943-g008a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/93d71e78765b/nanomaterials-11-00943-g009a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/c4ddb234ae0b/nanomaterials-11-00943-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/bf9e2ccd713f/nanomaterials-11-00943-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/8871aa1c76f4/nanomaterials-11-00943-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/035dce6a6fd0/nanomaterials-11-00943-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/5d7748e0c5eb/nanomaterials-11-00943-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/c921873ba031/nanomaterials-11-00943-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/ae4f0ecf715a/nanomaterials-11-00943-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/eca4dd42123d/nanomaterials-11-00943-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/7f9fbb896135/nanomaterials-11-00943-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/26e8f47cc047/nanomaterials-11-00943-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/e838bdcdefb3/nanomaterials-11-00943-g007a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/b9d25596f24a/nanomaterials-11-00943-g008a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/93d71e78765b/nanomaterials-11-00943-g009a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/c4ddb234ae0b/nanomaterials-11-00943-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/bf9e2ccd713f/nanomaterials-11-00943-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/8871aa1c76f4/nanomaterials-11-00943-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/832a/8067983/035dce6a6fd0/nanomaterials-11-00943-g013.jpg

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