INAOE, Electronics Department, Apartado 51, Puebla 72000, Mexico.
Nanotechnology. 2010 Feb 26;21(8):85710. doi: 10.1088/0957-4484/21/8/085710. Epub 2010 Jan 26.
Electroluminescent properties of silicon-rich oxide (SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4 at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 degrees C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths--across the SRO film--has been proposed to explain the EL behaviour in these devices.
采用金属氧化物半导体（MOS）类似器件研究了富硅氧化物（SRO）薄膜的电致发光性质。通过低压化学气相沉积法沉积了具有 4 原子%过量硅的薄 SRO 薄膜，然后在 1100°C 下进行热退火。当器件分别反向和正向偏置时，观察到强烈的连续可见和红外发光。在电应力之后，连续电致发光（EL）被猝灭，但器件表现出具有脉冲极化的强场效应 EL。已经提出了一种基于穿过 SRO 薄膜的导电路径的模型来解释这些器件中的 EL 行为。
