Lim Heesun, Hwang Jaeyeob, Kwon Soonho, Baek Hyunjun, Uhm Juneik, Lee GeunHo
Electric Motor Control Laboratory, Graduate School of Automotive Engineering, Kookmin University, Seoul 02707, Korea.
Sensors (Basel). 2021 Apr 2;21(7):2454. doi: 10.3390/s21072454.
This paper proposes a junction temperature estimation algorithm for the insulated gate bipolar transistor (IGBT) based on a power loss calculation and a thermal impedance model for inverter systems. The Simulink model was designed to calculate the power losses of power semiconductor devices and to estimate the junction temperature with a simplified thermal impedance model. This model can estimate the junction temperature up to the transient state, including the steady state. The parameters used to calculate the power losses, the thermal resistance, and the thermal capacitance were optimized for a given inverter to be tested for improving the accuracy. The simulation results and experimental measurement data were compared to verify the proposed junction temperature estimation algorithm. Finally, the algorithm was installed on the inverter controller, and the performance was verified by comparing the real time estimation result with the measured temperature.
本文提出了一种基于功率损耗计算和逆变器系统热阻抗模型的绝缘栅双极型晶体管（IGBT）结温估算算法。设计了Simulink模型来计算功率半导体器件的功率损耗，并使用简化的热阻抗模型估算结温。该模型能够估算直至瞬态（包括稳态）的结温。针对给定要测试的逆变器，对用于计算功率损耗、热阻和热电容的参数进行了优化，以提高准确性。将仿真结果与实验测量数据进行比较，以验证所提出的结温估算算法。最后，将该算法安装在逆变器控制器上，并通过将实时估算结果与测量温度进行比较来验证其性能。
