Xiang Bole, Li Guoqiang, Liu Zhihui
School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China.
State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China.
Micromachines (Basel). 2025 Apr 14;16(4):465. doi: 10.3390/mi16040465.
In the new energy electric drive system, the thermal stability of IGBT, a core power device, significantly impacts the system's overall performance. Accurate IGBT temperature measurement is crucial, but traditional methods face limitations in IGBT's compact working space. Thin-film thermocouples, with their thin and light features, offer a new solution. In this study, Ni 90% Cr 10% and Ni 97% Si 3% thin-film thermocouples were prepared on polyimide substrates via magnetron sputtering. After calibration, the Seebeck coefficient of the thin-film thermocouple temperature sensors reached 40.23 μV/°C, and the repeatability error stabilized at about 0.3% as the temperature rose, showing good stability. Researchers studied factors affecting IGBT temperature. Thin-film thermocouples can accurately monitor IGBT module surface temperature under different conditions. Compared to K-type wire thermocouples, they measure slightly higher temperatures. As the control signal's switching frequency increases, IGBT temperature first rises then falls; as the duty cycle increases, the temperature keeps rising. This is consistent with RAC's junction temperature prediction theory, validating the feasibility of thin-film thermocouples for IGBT chip temperature measurement. Thin-film thermocouples have great application potential in power device temperature measurement and may be a key research direction, supporting the optimization and upgrading of new energy electric drive systems.
在新能源电力驱动系统中，核心功率器件绝缘栅双极型晶体管（IGBT）的热稳定性对系统的整体性能有显著影响。精确测量IGBT的温度至关重要，但传统方法在IGBT紧凑的工作空间中存在局限性。薄膜热电偶因其薄且轻的特性提供了一种新的解决方案。在本研究中，通过磁控溅射在聚酰亚胺基板上制备了镍铬合金（Ni 90% Cr 10%）和镍硅合金（Ni 97% Si 3%）薄膜热电偶。经过校准后，薄膜热电偶温度传感器的塞贝克系数达到40.23 μV/°C，随着温度升高，重复性误差稳定在约0.3%，显示出良好的稳定性。研究人员研究了影响IGBT温度的因素。薄膜热电偶能够在不同条件下准确监测IGBT模块表面温度。与K型线热电偶相比，其测量的温度略高。随着控制信号开关频率的增加，IGBT温度先上升后下降；随着占空比的增加，温度持续上升。这与RAC的结温预测理论一致，验证了薄膜热电偶用于IGBT芯片温度测量的可行性。薄膜热电偶在功率器件温度测量方面具有巨大的应用潜力，可能是一个关键的研究方向，有助于新能源电力驱动系统的优化升级。
