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CsSnPbI量子点作为界面层对碳基钙钛矿太阳能电池光伏性能的影响

Effects of CsSnPbI Quantum Dots as Interfacial Layer on Photovoltaic Performance of Carbon-Based Perovskite Solar Cells.

作者信息

Zhang Chi, He Zhiyuan, Luo Xuanhui, Meng Rangwei, Chen Mengwei, Lu Haifei, Yang Yingping

机构信息

Department of Physics, School of Science, Wuhan University of Technology, Wuhan, 430070, People's Republic of China.

出版信息

Nanoscale Res Lett. 2021 Apr 29;16(1):74. doi: 10.1186/s11671-021-03533-y.

DOI:10.1186/s11671-021-03533-y
PMID:33928451
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8085196/
Abstract

In this work, inorganic tin-doped perovskite quantum dots (PQDs) are incorporated into carbon-based perovskite solar cells (PSCs) to improve their photovoltaic performance. On the one hand, by controlling the content of Sn doping, the energy level of the tin-doped PQDs can be adjusted, to realize optimized band alignment and enhanced separation of photogenerated electron-hole pairs. On the other hand, the incorporation of tin-doped PQDs provided with a relatively high acceptor concentration due to the self-p-type doping effect is able to reduce the width of the depletion region near the back surface of the perovskite, thereby enhancing the hole extraction. Particularly, after the addition of CsSnPbI quantum dots (QDs), improvement of the power conversion efficiency (PCE) from 12.80 to 14.22% can be obtained, in comparison with the pristine device. Moreover, the experimental results are analyzed through the simulation of the one-dimensional perovskite/tin-doped PQDs heterojunction.

摘要

在这项工作中,无机锡掺杂钙钛矿量子点(PQDs)被引入碳基钙钛矿太阳能电池(PSCs)中以提高其光伏性能。一方面,通过控制锡掺杂的含量,可以调节锡掺杂PQDs的能级,以实现优化的能带对准并增强光生电子 - 空穴对的分离。另一方面,由于自p型掺杂效应而具有相对较高受体浓度的锡掺杂PQDs的引入能够减小钙钛矿背面附近耗尽区的宽度,从而增强空穴提取。特别是,添加CsSnPbI量子点(QDs)后,与原始器件相比,功率转换效率(PCE)可从12.80%提高到14.22%。此外,通过一维钙钛矿/锡掺杂PQDs异质结的模拟对实验结果进行了分析。

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