Gao Xumin, Jia Bolun, Ye ZiQi, Wang Linning, Fu Kang, Liu Pengzhan, Hu Fangren, Zhu Hongbo, Wang Yongjin
Opt Lett. 2021 May 1;46(9):2075-2078. doi: 10.1364/OL.423496.
Due to the electro-optic property of InGaN multiple quantum wells, a III-nitride diode can provide light transmission, photo detection, and energy harvesting under different bias conditions. Made of III-nitride diodes arrayed in a single chip, the combination allows the diodes to transmit, detect, and harvest visible light at the same time. Here, we monolithically integrate a III-nitride transmitter, receiver, and energy harvester using a compatible foundry process. By adopting a bottom / distributed Bragg reflector, we present a III-nitride diode with a peak external quantum efficiency of 50.65% at a forward voltage of 2.6 V for light emission, a power conversion efficiency of 6.68% for energy harvesting, and a peak external quantum efficiency of 50.9% at a wavelength of 388 nm for photon detection. The energy harvester generates electricity from ambient light to directly turn the transmitter on. By integrating a circuit, the electrical signals generated by the receiver pulse the emitted light to relay information. The multifunctioning system can continuously operate without an external power supply. Our work opens up a promising approach to develop multicomponent systems with new interactive functions and multitasking devices, due to III-nitride diode arrays that can simultaneously transmit, detect, and harvest light.
由于氮化铟镓多量子阱的电光特性，III族氮化物二极管能够在不同偏置条件下实现光传输、光电探测和能量收集。由排列在单个芯片中的III族氮化物二极管制成，这种组合使二极管能够同时传输、探测和收集可见光。在此，我们采用兼容的代工工艺，将III族氮化物发射器、接收器和能量收集器单片集成在一起。通过采用底部/分布式布拉格反射器，我们展示了一种III族氮化物二极管，其在2.6V正向电压下发光时的峰值外量子效率为50.65%，能量收集时的功率转换效率为6.68%，在388nm波长下进行光子探测时的峰值外量子效率为50.9%。能量收集器从环境光中发电，直接开启发射器。通过集成一个电路，接收器产生的电信号对发射光进行脉冲调制以中继信息。该多功能系统无需外部电源即可持续运行。由于III族氮化物二极管阵列能够同时传输、探测和收集光，我们的工作为开发具有新交互功能的多组件系统和多任务设备开辟了一条有前景的途径。
