Sun Qingya, Zhang Xinfang, Liu Ruonan, Shen Shaofeng, Wu Fan, Xie Aming
School of Mechanical Engineering, Nanjing University of Science & Technology, Nanjing 210094, China.
Nanomaterials (Basel). 2021 Apr 29;11(5):1164. doi: 10.3390/nano11051164.
It is of great significance to regulate the dielectric parameters and microstructure of carbon materials by elemental doping in pursuing microwave absorption (MA) materials of high performance. In this work, the surface electronic structure of N-doped CNTs was tuned by boron doping, in which the MA performance of CNTs was improved under the synergistic action of B and N atoms. The B,N-doped carbon nanotubes (B,N-CNTs) exhibited excellent MA performance, where the value of minimum reflection loss was -40.04 dB, and the efficient absorption bandwidth reached 4.9 GHz (10.5-15.4 GHz). Appropriate conductance loss and multi-polarization loss provide the main contribution to the MA of B,N-CNTs. This study provides a novel method for the design of CNTs related MA materials.
在追求高性能微波吸收（MA）材料的过程中，通过元素掺杂来调控碳材料的介电参数和微观结构具有重要意义。在这项工作中，通过硼掺杂来调节氮掺杂碳纳米管（N-CNTs）的表面电子结构，其中碳纳米管的MA性能在B和N原子的协同作用下得到改善。硼、氮共掺杂碳纳米管（B，N-CNTs）表现出优异的MA性能，其最小反射损耗值为-40.04 dB，有效吸收带宽达到4.9 GHz（10.5-15.4 GHz）。适当的电导损耗和多极化损耗为B，N-CNTs的MA提供了主要贡献。该研究为碳纳米管相关MA材料的设计提供了一种新方法。
