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采用近零介电常数纳米加热器的纳米光子硅波导中的全光相位控制。

All-optical phase control in nanophotonic silicon waveguides with epsilon-near-zero nanoheaters.

作者信息

Parra Jorge, Pernice Wolfram H P, Sanchis Pablo

机构信息

Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera s/n, 46022, Valencia, Spain.

Institute of Physics, CeNTech, University of Münster, Heisenbergstr. 11, 48161, Münster, Germany.

出版信息

Sci Rep. 2021 May 4;11(1):9474. doi: 10.1038/s41598-021-88865-6.

Abstract

A wide variety of nanophotonic applications require controlling the optical phase without changing optical absorption, which in silicon (Si) photonics has been mostly pursued electrically. Here, we investigate the unique light-matter interaction exhibited by epsilon-near-zero (ENZ) materials for all-optical phase control in nanophotonic silicon waveguides. Thermo-optic all-optical phase tuning is achieved using an ENZ material as a compact, low-loss, and efficient optical heat source. For a 10-[Formula: see text]m-long ENZ/Si waveguide, insertion loss below 0.5 dB for the transverse electric (TE) polarization is predicted together with a high control efficiency of [Formula: see text] [Formula: see text]. Our proposal provides a new approach to achieve all-optical, on-chip, and low-loss phase tuning in silicon photonic circuits.

摘要

各种各样的纳米光子应用都需要在不改变光吸收的情况下控制光相位,在硅光子学中,这大多是通过电方式来实现的。在此,我们研究了介电常数近零(ENZ)材料在纳米光子硅波导中实现全光相位控制时所展现出的独特光与物质相互作用。利用ENZ材料作为紧凑、低损耗且高效的光热源,实现了热光全光相位调谐。对于一条10微米长的ENZ/硅波导,预测横向电(TE)偏振的插入损耗低于0.5分贝,同时具有[公式:见原文]的高控制效率。我们的提议为在硅光子电路中实现全光、片上且低损耗的相位调谐提供了一种新方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4f75/8096950/f2911b903aaf/41598_2021_88865_Fig1_HTML.jpg

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