Ilie Stefan T, Faneca Joaquin, Zeimpekis Ioannis, Bucio Thalía Domínguez, Grabska Katarzyna, Hewak Daniel W, Chong Harold M H, Gardes Frederic Y
Optoelectronics Research Centre, University of Southampton, Highfield, Southampton, SO17 1BJ UK.
Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra, Barcelona Spain.
Sci Rep. 2022 Oct 24;12(1):17815. doi: 10.1038/s41598-022-21590-w.
A new family of phase change material based on antimony has recently been explored for applications in near-IR tunable photonics due to its wide bandgap, manifested as broadband transparency from visible to NIR wavelengths. Here, we characterize [Formula: see text] optically and demonstrate the integration of this phase change material in a silicon nitride platform using a microring resonator that can be thermally tuned using the amorphous and crystalline states of the phase change material, achieving extinction ratios of up to 18 dB in the C-band. We extract the thermo-optic coefficient of the amorphous and crystalline states of the [Formula: see text] to be 3.4 x [Formula: see text] and 0.1 x 10[Formula: see text], respectively. Additionally, we detail the first observation of bi-directional shifting for permanent trimming of a non-volatile switch using continuous wave (CW) laser exposure ([Formula: see text] to 5.1 dBm) with a modulation in effective refractive index ranging from +5.23 x [Formula: see text] to [Formula: see text] x 10[Formula: see text]. This work experimentally verifies optical phase modifications and permanent trimming of [Formula: see text], enabling potential applications such as optically controlled memories and weights for neuromorphic architecture and high density switch matrix using a multi-layer PECVD based photonic integrated circuit.
最近，一种基于锑的新型相变材料因其宽带隙而被探索用于近红外可调谐光子学，其表现为从可见光到近红外波长的宽带透明度。在此，我们对[公式：见正文]进行光学表征，并展示了这种相变材料在氮化硅平台中的集成，使用了一个微环谐振器，该谐振器可以利用相变材料的非晶态和晶态进行热调谐，在C波段实现了高达18 dB的消光比。我们提取出[公式：见正文]非晶态和晶态的热光系数分别为3.4×[公式：见正文]和0.1×10[公式：见正文]。此外，我们详细介绍了首次观察到的使用连续波（CW）激光曝光（[公式：见正文]至5.1 dBm）对非易失性开关进行永久微调时的双向偏移，有效折射率调制范围为+5.23×[公式：见正文]至[公式：见正文]×10[公式：见正文]。这项工作通过实验验证了[公式：见正文]的光学相位修改和永久微调，为诸如光控存储器和用于神经形态架构的权重以及使用基于多层PECVD的光子集成电路的高密度开关矩阵等潜在应用提供了可能。
