Wu Jianyu, Zhang Shengli, Guo Hongling, Wu Xu, Li Hui, Liu Yue, Shen Zhan, Wu Li, Wang Weihuang, Zhang Yi
Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin Film Devices and Technology, Nankai University, Tianjin 300350, P. R. China.
School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China.
J Phys Chem Lett. 2021 May 13;12(18):4447-4452. doi: 10.1021/acs.jpclett.1c01094. Epub 2021 May 6.
The contact, and thus the hole collection between CuZnSnSe (CZTSe) and Mo, is a crucial issue to improve the performance of CZTSe solar cells. In this work, a method to improve the back contact is explored by spraying NaPO on the surface of the Mo back contact. With the O provided from NaPO, extra MoO and MoO are formed at the surface of the back contact, and partial MoO is transformed into MoSe under high Se partial pressure during the selenization process. The formation of MoSe progresses from dispersed spots to a continuous layer but not from the reaction between CZTSe and Mo. Although a thick MoSe layer is formed, the CZTSe device performance increases from 7.2% to 8.3% on average. This study affords new insight into the formation of MoSe, thus deeply strengthening the understanding of the back contact of kesterite solar cells and of two-dimensional chalcogenide devices.
铜锌锡硒（CZTSe）与钼之间的接触以及由此产生的空穴收集，是提高CZTSe太阳能电池性能的关键问题。在这项工作中，通过在钼背接触表面喷涂磷酸钠来探索一种改善背接触的方法。随着磷酸钠提供的氧，在背接触表面形成了额外的氧化钼和二氧化钼，并且在硒化过程中，在高硒分压下部分二氧化钼转化为硒化钼。硒化钼的形成从分散的斑点发展到连续的层，而不是由CZTSe与钼之间的反应形成。尽管形成了较厚的硒化钼层，但CZTSe器件性能平均从7.2%提高到了8.3%。本研究为硒化钼的形成提供了新的见解，从而深入加强了对锌黄锡矿太阳能电池背接触以及二维硫族化物器件的理解。
