Wang Kun, Zhang Yuan, Wang Sixu, Zhao Yu-Yao, Cheng Hongbo, Li Qian, Zhong Xiangli, Ouyang Jun
Key Laboratory for Liquid-Solid Structure Evolution and Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan 250061, China.
Institute of Advanced Energy Materials and Chemistry, Jinan Engineering Laboratory for Multi-scale Functional Materials, Shandong Provincial Key Laboratory of Molecular Engineering, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China.
ACS Appl Mater Interfaces. 2021 May 19;13(19):22717-22727. doi: 10.1021/acsami.1c01275. Epub 2021 May 6.
BaTiO-based ferroelectrics have been extensively studied due to their large dielectric constants and a high saturated polarization, which have the potential to store or supply electricity of very high energy and power densities. In order to further improve the energy efficiency η and the recyclable energy density , an A, B-site co-doped (Ba,Sr)(Zr,Ti)O ceramic target was used for sputter deposition of film capacitor structures on Si. This film composition reduces the remnant polarization , while the choice of a low-temperature, templated sputtering process facilitates the formation of high-density arrays of columnar nanograins (average diameter ∼20 nm) and grain boundary dead layers. This self-assembled nanostructure further delays the saturation of the electric polarization, leading to a high energy density of ∼148 J/cm and a high energy efficiency of ∼90%. Moreover, the (Ba,Sr)(Zr,Ti)O film capacitors retain their high energy storage performance in a broad range of working temperature (-175-300 °C) and operating frequency (1 Hz-20 kHz). They are also fatigue-free after up to 2 × 10 switching cycles. Our work provides a new method and a cost-effective processing route for the creation and integration of high-performance dielectric capacitors for energy storage applications.
基于钛酸钡的铁电体因其大介电常数和高饱和极化而被广泛研究，它们有潜力存储或供应具有非常高能量和功率密度的电。为了进一步提高能量效率η和可回收能量密度，采用A、B位共掺杂的(Ba,Sr)(Zr,Ti)O陶瓷靶在硅上溅射沉积薄膜电容器结构。这种薄膜成分降低了剩余极化，而选择低温、模板化溅射工艺有助于形成柱状纳米晶粒（平均直径约20纳米）的高密度阵列和晶界死层。这种自组装纳米结构进一步延迟了极化的饱和，导致约148 J/cm的高能量密度和约90%的高能量效率。此外，(Ba,Sr)(Zr,Ti)O薄膜电容器在宽工作温度范围（-175 - 300°C）和工作频率范围（1 Hz - 20 kHz）内保持其高储能性能。在高达2×10次开关循环后它们也无疲劳现象。我们的工作为用于储能应用的高性能介电电容器的制造和集成提供了一种新方法和具有成本效益的加工路线。
