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利用柱状纳米晶铁电薄膜在硅上实现创纪录的高电容能量密度。

Achieving a Record-High Capacitive Energy Density on Si with Columnar Nanograined Ferroelectric Films.

作者信息

Zhu Hanfei, Zhao Yu-Yao, Ouyang Jun, Wang Kun, Cheng Hongbo, Su Yu

机构信息

Institute of Advanced Energy Materials and Chemistry, Jinan Engineering Laboratory for Multi-scale Functional Materials, Shandong Provincial Key Laboratory of Molecular Engineering, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China.

Key Laboratory for Liquid-Solid Structure Evolution and Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan 250061, China.

出版信息

ACS Appl Mater Interfaces. 2022 Feb 16;14(6):7805-7813. doi: 10.1021/acsami.1c19197. Epub 2022 Feb 1.

DOI:10.1021/acsami.1c19197
PMID:35104097
Abstract

High energy density dielectric film capacitors are desirable in modern electronic devices. Their miniaturization and integration into Si-based microsystems create opportunities for in-circuit energy supply, buffering, and conditioning. Here, we present a CMOS (complementary metal oxide semiconductor)-compatible route for the fabrication of BaTiO film capacitors on Si with a record-high recoverable energy density and good efficiency (∼242 J/cm and ∼76% at 8.75 MV/cm). These BaTiO films were sputter-deposited at 350 °C and consisted of slightly compressed superfine columnar nanograins with a (001) texture. Such a nanostructure was endowed with a high breakdown strength, a reduced remnant polarization, and an enhanced maximum polarization, which are accountable for their excellent energy storage performance. Moreover, these BaTiO film capacitors displayed a high electrical fatigue resistance, a wide range of operating temperatures, and an excellent frequency stability. With an engineered nanostructure, the prototype perovskite of BaTiO has shown great promise for capacitive energy storage applications.

摘要

高能量密度介电薄膜电容器在现代电子设备中备受青睐。它们的小型化以及与基于硅的微系统集成,为电路中的能量供应、缓冲和调节创造了机会。在此,我们展示了一种与互补金属氧化物半导体(CMOS)兼容的方法,用于在硅上制造钛酸钡(BaTiO)薄膜电容器,其具有创纪录的高可恢复能量密度和良好效率(在8.75 MV/cm时约为242 J/cm³和约76%)。这些BaTiO薄膜在350°C下通过溅射沉积而成,由具有(001)织构的轻微压缩超细柱状纳米晶粒组成。这种纳米结构具有高击穿强度、降低的剩余极化和增强的最大极化,这解释了它们优异的能量存储性能。此外,这些BaTiO薄膜电容器表现出高抗电疲劳性、宽工作温度范围和出色的频率稳定性。通过精心设计的纳米结构,BaTiO的原型钙钛矿在电容式能量存储应用中显示出巨大潜力。

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引用本文的文献

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Achieving a High Energy Storage Performance in Grain Engineered (Ba,Sr)(Zr,Ti)O Ferroelectric Films Integrated on Si.在集成于硅上的晶粒工程化(Ba,Sr)(Zr,Ti)O铁电薄膜中实现高储能性能。
Nanomaterials (Basel). 2025 Jun 13;15(12):920. doi: 10.3390/nano15120920.
2
Structure-evolution-designed amorphous oxides for dielectric energy storage.结构设计非晶态氧化物用于介电储能。
Nat Commun. 2023 May 25;14(1):3031. doi: 10.1038/s41467-023-38847-1.
3
Energy Storage Properties of Sol-Gel-Processed SrTiO Films.溶胶-凝胶法制备的SrTiO薄膜的储能特性
Materials (Basel). 2022 Dec 21;16(1):31. doi: 10.3390/ma16010031.