Askar Abdelrahman M, Saeed Mohamed, Hamed Ahmed, Negra Renato, Adachi Michael M
School of Engineering Science, Simon Fraser University, 8888 University Drive, Burnaby, British Columbia V5A 1S6, Canada.
Chair of High Frequency Electronics, RWTH Aachen University, Kopernikusstr. 16, 52074 Aachen, Germany.
Nanoscale. 2021 May 20;13(19):8940-8947. doi: 10.1039/d1nr00089f.
Thickness-modulated lateral MoS2 diodes with an extracted benchmark cutoff frequency (fc) of up to 126 GHz are implemented and fully characterised. Fabricated diodes demonstrate an on-off current ratio of more than 600 and a short circuit current responsivity at zero-bias of 7 A/W. The excellent performance achieved in our device is attributed to reduced contact resistance from using In/Au contacts and low junction capacitance due to the lateral device structure. In addition, the use of multilayer MoS2 crystals enabled relatively high current flow. Small- and large-signal models are extracted from DC and RF characterisation of the fabricated diode prototype. Extracted compact models are compared to the measured DC and S-parameters of the diode, demonstrating excellent matching between models and measurements. The presented diode is suitable for switching circuits and high frequency applications.
实现了具有高达126GHz的提取基准截止频率（fc）的厚度调制横向二硫化钼二极管，并对其进行了全面表征。制造的二极管显示出超过600的开/关电流比和零偏置下7A/W的短路电流响应率。我们器件所实现的优异性能归因于使用In/Au接触降低了接触电阻以及横向器件结构导致的低结电容。此外，多层二硫化钼晶体的使用实现了相对较高的电流流动。从制造的二极管原型的直流和射频表征中提取了小信号和大信号模型。将提取的紧凑模型与二极管的测量直流和S参数进行比较，结果表明模型与测量之间具有出色的匹配度。所展示的二极管适用于开关电路和高频应用。
