Alathbah Moath
School of Engineering, Cardiff University, Cardiff CF24 3AA, UK.
College of Engineering, King Saud University, Riyadh 11451, Saudi Arabia.
Micromachines (Basel). 2022 Dec 20;14(1):2. doi: 10.3390/mi14010002.
This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V), and 36% in ON-resistance, RON (1.52 to 0.97 to Ω·mm), as a result of lowering the Schottky barrier height, Φn, when compared to conventional lateral SBDs. No compromise in reverse-breakdown voltage or reverse-bias leakage current performance was observed as both multi-channel and conventional technologies exhibited a VBV of (VBV > 30 V) and an IR of (IR < 38 μA/mm), respectively. Furthermore, a precise small-signal equivalent circuit model was developed and verified for frequencies up to 110 GHz. The fabricated devices exhibited cut-off frequencies of up to 0.6 THz, demonstrating the potential use of lateral AlGaN/GaN SBDs on LR silicon for high-efficiency, high-frequency integrated circuits’ applications. The paper begins with a brief outline of the basic Schottky-contact diode operation. A series resistance analysis of the diode studied in this project is discussed. The small signal equivalent circuit of the Schottky-contact diode is presented. The layout of the diodes studied is described, and their fabrication techniques are briefly mentioned. DC, RF, and low frequency C-V measurement techniques and measurements to characterize the diodes are outlined. Finally, results and discussions on the effects of multiple recesses under the Schottky-contact (anode) obtained from the I-V diode characteristics and C-V measurements, and the small signal equivalent circuit deduced from RF measurements for different diode configurations, are presented.
本文介绍了基于低电阻率（LR）（σ = 0.02Ω·cm）硅衬底上的AlGaN/GaN的新型多通道射频横向肖特基势垒二极管（SBD）。与传统横向SBD相比，所开发的技术由于降低了肖特基势垒高度Φn，使开启电压VON降低了37%（从1.34 V降至0.84 V），导通电阻RON降低了36%（从1.52Ω·mm降至0.97Ω·mm）。在反向击穿电压或反向偏置漏电流性能方面没有出现折衷，因为多通道技术和传统技术的反向击穿电压均大于30 V，反向偏置漏电流均小于38 μA/mm。此外，还开发并验证了一个精确的小信号等效电路模型，其频率高达110 GHz。所制造的器件截止频率高达0.6 THz，证明了LR硅上的横向AlGaN/GaN SBD在高效高频集成电路应用中的潜在用途。本文首先简要概述了肖特基接触二极管的基本工作原理。讨论了本项目中所研究二极管的串联电阻分析。给出了肖特基接触二极管的小信号等效电路。描述了所研究二极管的版图，并简要提及了它们的制造技术。概述了用于表征二极管的直流、射频和低频C-V测量技术及测量方法。最后给出了从I-V二极管特性和C-V测量获得的肖特基接触（阳极）下多个凹槽的影响的结果和讨论，以及针对不同二极管配置从射频测量推导的小信号等效电路。
