Zhou Yong, Lu Rongguo, Wang Guangbiao, Lyu Jiangbo, Tan Meng, Shen Liming, Lin Rui, Yang Zhonghua, Liu Yong
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Chongqing United Microelectronics Center, Chongqing, 401332, China.
Nanoscale Res Lett. 2021 May 8;16(1):80. doi: 10.1186/s11671-021-03538-7.
A polarization-insensitive graphene-based mid-infrared optical modulator is presented that comprised SiO/ GeSbS, in which two graphene layers are embedded with a semiellipse layout to support transverse magnetic (TM) and transverse electric (TE) polarizing modes with identical absorption. The key performance index for the polarization independent modulator is polarization-sensitivity loss (PSL). The waveguide of our device just supports basic TE and TM modes, and the PSL between two modes is of < 0.24 dB. The model can offer extinction ratio (ER) more than 16 dB and insertion loss less than 1 dB. The operation spectrum ranges from 2 to 2.4 μm with optical bandwidth of 400 nm. The 3 dB modulation bandwidth is as high as 136 GHz based on theoretical calculation.
本文提出了一种基于石墨烯的偏振不敏感中红外光调制器，其由SiO/GeSbS组成，其中两层石墨烯以半椭圆形布局嵌入，以支持具有相同吸收率的横向磁（TM）和横向电（TE）偏振模式。偏振无关调制器的关键性能指标是偏振敏感损耗（PSL）。我们器件的波导仅支持基本的TE和TM模式，两种模式之间的PSL小于0.24dB。该模型可提供超过16dB的消光比（ER）和小于1dB的插入损耗。工作光谱范围为2至2.4μm，光带宽为400nm。基于理论计算，3dB调制带宽高达136GHz。
