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孤立相和晶格相界面斯格明子之间转变处的巨大拓扑霍尔效应。

Colossal topological Hall effect at the transition between isolated and lattice-phase interfacial skyrmions.

作者信息

Raju M, Petrović A P, Yagil A, Denisov K S, Duong N K, Göbel B, Şaşıoğlu E, Auslaender O M, Mertig I, Rozhansky I V, Panagopoulos C

机构信息

Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.

Institute for Quantum Matter and Department of Physics and Astronomy, Johns Hopkins University, Baltimore, MD, USA.

出版信息

Nat Commun. 2021 May 12;12(1):2758. doi: 10.1038/s41467-021-22976-6.

Abstract

The topological Hall effect is used extensively to study chiral spin textures in various materials. However, the factors controlling its magnitude in technologically-relevant thin films remain uncertain. Using variable-temperature magnetotransport and real-space magnetic imaging in a series of Ir/Fe/Co/Pt heterostructures, here we report that the chiral spin fluctuations at the phase boundary between isolated skyrmions and a disordered skyrmion lattice result in a power-law enhancement of the topological Hall resistivity by up to three orders of magnitude. Our work reveals the dominant role of skyrmion stability and configuration in determining the magnitude of the topological Hall effect.

摘要

拓扑霍尔效应被广泛用于研究各种材料中的手性自旋纹理。然而,在技术相关的薄膜中控制其大小的因素仍不明确。通过在一系列Ir/Fe/Co/Pt异质结构中使用变温磁输运和实空间磁成像,我们在此报告,孤立斯格明子与无序斯格明子晶格之间相界处的手性自旋涨落导致拓扑霍尔电阻率按幂律增强,增幅高达三个数量级。我们的工作揭示了斯格明子稳定性和构型在决定拓扑霍尔效应大小方面的主导作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/803c/8115237/530477f646fd/41467_2021_22976_Fig1_HTML.jpg

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