Shaodong Hou, Chengjin Lu, Haifeng Lin, Jinzhang Wang, Chunyu Guo, Jianqun Cheng, Min Zhang, Peiguang Yan
Opt Express. 2021 Apr 26;29(9):13722-13732. doi: 10.1364/OE.421993.
We report, for the first time, the nonlinear absorption at the 2 µm waveband of three Sb-related materials including two Sb compounds, GaSb and InSb, and one Sb alloy, GeSb. These saturable absorbers (SAs) were coated on tapered single mode fibers by the magnetron-sputtering deposition method. By incorporating these SAs into Tm-doped fiber lasers, ultrafast mode-locked solitons could be readily obtained. Stable pulse trains with 922 fs/753 fs/1005 fs pulse durations, 31.35 mW/37.70 mW/16.60 mW output powers, 93 dB/80 dB/92 dB signal-to-noise ratios were achieved with GaSb/InSb/GeSb, respectively. Our findings demonstrate that these materials can be widely used for photonic devices in the 2 µm waveband where ultrafast optical switching and modulating are desired.
我们首次报道了三种与锑相关的材料在2微米波段的非线性吸收，其中包括两种锑化合物，即砷化镓（GaSb）和锑化铟（InSb），以及一种锑合金，即锗锑（GeSb）。这些可饱和吸收体（SAs）通过磁控溅射沉积法涂覆在锥形单模光纤上。通过将这些可饱和吸收体纳入掺铥光纤激光器中，可以很容易地获得超快锁模孤子。使用砷化镓/锑化铟/锗锑分别实现了脉宽为922飞秒/753飞秒/1005飞秒、输出功率为31.35毫瓦/37.70毫瓦/16.60毫瓦、信噪比为93分贝/80分贝/92分贝的稳定脉冲序列。我们的研究结果表明，这些材料可广泛用于2微米波段的光子器件，该波段需要超快光开关和调制。
