Pang Lihui, Wang Rongfeng, Zhao Qiyi, Zhao Meng, Jiang Le, Zhang Xiaogang, Wu Rongqian, Lv Yi, Liu Wenjun
Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an 710061, China.
Nanoscale. 2023 Aug 3;15(30):12728-12736. doi: 10.1039/d3nr01416a.
Sb-related III-V compounds have recently gained great research interest owing to their excellent optical and electrical characteristics, which provide many possibilities in photonics and electronics. This study investigated the application of InSb films in ultrafast photonics. An InSb film was fabricated on the tapered zone of a microfiber, and its saturation intensity, modulation depth, and non-saturable loss were determined as 119.8 MW cm, 23.5%, and 27.3%, respectively. The structure of the electronic band and density of states of InSb were theoretically calculated. Notably, mode-locked and Q-switched fiber lasers were realised by incorporating the InSb-microfiber device into two different Er-doped fiber cavities. In the Q-switching state, the narrowest pulse duration was measured as 1.756 μs with a maximum single-pulse energy of 221.95 nJ and a signal-to-noise ratio of 60 dB. In the mode-locking operation, ultrafast lasers with a high signal-to-noise ratio (70 dB), a pulse width as narrow as 265 fs and a repetition rate of 49.51 MHz were acquired. Besides, the second-harmonic mode-locked state was built with an output power of 13.22 mW. In comparison with the reported laser performance with 2D materials as saturable absorbers, the InSb-based mode-locked and Q-switched fiber lasers proposed herein exhibit better comprehensive performance.
与锑相关的III-V族化合物因其优异的光学和电学特性，最近引起了极大的研究兴趣，这些特性在光子学和电子学领域提供了许多可能性。本研究调查了InSb薄膜在超快光子学中的应用。在微光纤的锥形区域制备了InSb薄膜，其饱和强度、调制深度和非饱和损耗分别测定为119.8 MW/cm、23.5%和27.3%。从理论上计算了InSb的电子能带结构和态密度。值得注意的是，通过将InSb-微光纤器件并入两个不同的掺铒光纤腔中，实现了锁模和调Q光纤激光器。在调Q状态下，测得最窄脉冲持续时间为1.756 μs，最大单脉冲能量为221.95 nJ，信噪比为60 dB。在锁模操作中，获得了具有高信噪比（70 dB）、窄至265 fs的脉冲宽度和49.51 MHz重复频率的超快激光器。此外，还建立了输出功率为13.22 mW的二次谐波锁模状态。与报道的以二维材料作为饱和吸收体的激光性能相比，本文提出的基于InSb的锁模和调Q光纤激光器表现出更好的综合性能。
