Wu Jing, Hao Hui Ming, Liu Yu, Zhang Yang, Zeng Xiao Lin, Zhu Shen Bo, Niu Zhi Chuan, Ni Hai Qiao, Chen Yong Hai
Opt Express. 2021 Apr 26;29(9):13829-13838. doi: 10.1364/OE.423121.
The anomalous circular photogalvanic effect (ACPGE) is observed in p-GaAs with a thickness of 2 μm at room temperature, in which circularly polarized light is used to inject spin-polarized carriers and the spin diffusion can generate a macroscopic detectable charge current due to the inverse spin Hall effect. The normalized ACPGE signals show first increasing and then decreasing with increasing the doping concentration. The role of the doping impurities is discussed by both extrinsic and intrinsic models, and both can well explain the variation of ACPGE with the doping concentration.
在室温下，在厚度为2μm的p型砷化镓中观察到反常圆光电流效应（ACPGE），其中圆偏振光用于注入自旋极化载流子，并且由于逆自旋霍尔效应，自旋扩散可以产生宏观可检测的电荷电流。归一化的ACPGE信号随掺杂浓度的增加先增大后减小。通过外在和内在模型讨论了掺杂杂质的作用，两者都能很好地解释ACPGE随掺杂浓度的变化。
