Guo Hongquan, Huang Jijie, Zhou Hua, Zuo Fan, Jiang Yifeng, Zhang Kelvin H L, Fu Xianzhu, Bu Yunfei, Cheng Wei, Sun Yifei
College of Energy, Xiamen University, Xiamen 361005, P. R. China.
School of Materials, Sun Yat-Sen University, Guangzhou, Guangdong 510275, P. R. China.
ACS Appl Mater Interfaces. 2021 Jun 2;13(21):24887-24895. doi: 10.1021/acsami.1c04903. Epub 2021 May 18.
Low-cost transition-metal oxide is regarded as a promising electrocatalyst family for an oxygen evolution reaction (OER). The classic design principle for an oxide electrocatalyst believes that point defect engineering, such as oxygen vacancies (V) or heteroatom doping, offers the opportunities to manipulate the electronic structure of material toward optimal OER activity. Oppositely, in this work, we discover a counterintuitive phenomenon that both V and an aliovalent dopant (i.e., proton (H)) in perovskite nickelate (i.e., NdNiO (NNO)) have a considerably detrimental effect on intrinsic OER performance. Detailed characterizations unveil that the introduction of these point defects leads to a decrease in the oxidative state of Ni and weakens Ni-O orbital hybridization, which triggers the local electron-electron correlation and a more insulating state. Evidenced by first-principles calculation using the density functional theory (DFT) method, the OER on nickelate electrocatalysts follows the lattice oxygen mechanism (LOM). The incorporation of point defect increases the energy barrier of transformation from OO*(V) to OH*(V) intermediates, which is regarded as the rate-determining step (RDS). This work offers a new and significant perspective of the role that lattice defects play in the OER process.
低成本过渡金属氧化物被认为是一种有前景的用于析氧反应(OER)的电催化剂家族。氧化物电催化剂的经典设计原则认为,点缺陷工程,如氧空位(V)或杂原子掺杂,为调控材料的电子结构以实现最佳OER活性提供了机会。相反,在这项工作中,我们发现了一个违反直觉的现象,即钙钛矿镍酸盐(即NdNiO(NNO))中的V和异价掺杂剂(即质子(H))对本征OER性能都有相当大的不利影响。详细表征表明,这些点缺陷的引入导致Ni的氧化态降低,并削弱了Ni-O轨道杂化,从而引发局部电子-电子关联和更绝缘的状态。使用密度泛函理论(DFT)方法进行的第一性原理计算证明,镍酸盐电催化剂上的OER遵循晶格氧机制(LOM)。点缺陷的掺入增加了从OO*(V)到OH*(V)中间体转化的能量势垒,这被视为速率决定步骤(RDS)。这项工作为晶格缺陷在OER过程中所起的作用提供了一个新的重要视角。