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揭示氢化钙钛矿镍酸盐中的强离子-电子-晶格耦合和电子反掺杂。

Unveiling Strong Ion-Electron-Lattice Coupling and Electronic Antidoping in Hydrogenated Perovskite Nickelate.

机构信息

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing, 100190, China.

School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.

出版信息

Adv Mater. 2023 Jun;35(26):e2300617. doi: 10.1002/adma.202300617. Epub 2023 May 4.

Abstract

Despite being highly promising for applications in emergent electronic devices, decoding both the ion-electron-lattice coupling in correlated materials at the atomic scale and the electronic band structure remains a big challenge due to the strong and complex correlation among these degrees of freedom. Here, taking an epitaxial thin film of perovskite nickelate NdNiO as a model system, hydrogen-ion-induced giant lattice distortion and enhanced NiO octahedra tilting/rotation are demonstrated, which leads to a new robust hydrogenated HNdNiO phase with lattice expansion larger than 10% on a series of substrates. Moreover, under the effect of ion-electron synergistic doping, it is found that the proposed electronic antidoping, i.e., the doped electrons mainly fill the ground-state oxygen 2p holes instead of changing the Ni oxidation state from Ni to Ni , dominates the metal-insulator transition. Meanwhile, lattice modification with enhanced Ni-O-Ni bond tilting or rotation mainly modifies the orbital density of states near the Fermi level. Last, by electric-field-controlled hydrogen-ion intercalation and its strong coupling to the lattice and electron charge, selective micrometer-scale patterns with distinct structural and electronic states are fabricated. The results provide direct evidence for a strong ion-electron-lattice coupling in correlated physics and exhibit its potential applications in designing novel materials and devices.

摘要

尽管在新兴电子设备的应用中极具前景,但由于这些自由度之间的强相互作用和复杂性,在原子尺度上解码关联材料中的离子-电子-晶格耦合以及电子能带结构仍然是一个巨大的挑战。在这里,我们以钙钛矿镍酸盐 NdNiO 的外延薄膜为模型系统,证明了氢离子诱导的巨大晶格畸变和增强的 NiO 八面体倾斜/旋转,这导致了一系列衬底上晶格膨胀超过 10%的新型稳定氢化 HNdNiO 相。此外,在离子-电子协同掺杂的作用下,我们发现所提出的电子反掺杂,即掺杂电子主要填充基态氧 2p 空穴,而不是改变 Ni 的氧化态从 Ni 到 Ni ,主导了金属-绝缘体转变。同时,晶格修饰增强了 Ni-O-Ni 键的倾斜或旋转,主要修饰了费米能级附近的轨道态密度。最后,通过电场控制的氢离子插层及其与晶格和电子电荷的强耦合,制备了具有不同结构和电子状态的选择性微米级图案。这些结果为关联物理中的强离子-电子-晶格耦合提供了直接证据,并展示了其在设计新型材料和器件方面的潜在应用。

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