Sabzalipour Amir, Mir Moslem, Zarenia Mohammad, Partoens Bart
University of Antwerp, Department of Physics, Groenenborgerlaan 171, 2020 Antwerp, Belgium.
Department of Physics, Faculty of Science, University of Zabol (UOZ), Zabol 98615-538, Iran.
J Phys Condens Matter. 2021 Jun 25;33(32). doi: 10.1088/1361-648X/ac0669.
We study the effect of structural inversion asymmetry, induced by the presence of substrates or by external electric fields, on charge transport in magnetic topological ultra-thin films. We consider general orientations of the magnetic impurities. Our results are based on the Boltzmann formalism along with a modified relaxation time scheme. We show that the structural inversion asymmetry enhances the charge transport anisotropy induced by the magnetic impurities and when only one conduction subband contributes to the charge transport a dissipationless charge current is accessible. We demonstrate how a substrate or gate voltage can control the effect of the magnetic impurities on the charge transport, and how this depends on the orientation of the magnetic impurities.
我们研究了由衬底的存在或外部电场引起的结构反演不对称性对磁性拓扑超薄膜中电荷输运的影响。我们考虑了磁性杂质的一般取向。我们的结果基于玻尔兹曼形式理论以及改进的弛豫时间方案。我们表明，结构反演不对称性增强了由磁性杂质引起的电荷输运各向异性，并且当只有一个传导子带对电荷输运有贡献时，可实现无耗散电荷电流。我们展示了衬底或栅极电压如何控制磁性杂质对电荷输运的影响，以及这如何取决于磁性杂质的取向。
