Huang You-Ren, Lin Xiang-Ling, Chen Bin, Zheng Hui-Dong, Chen Zhi-Rong, Li Hao-Hong, Zheng Shou-Tian
State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian, 350108, China.
Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals, Fuzhou University, Fujian, 350108, China.
Angew Chem Int Ed Engl. 2021 Jul 26;60(31):16911-16916. doi: 10.1002/anie.202104333. Epub 2021 Jun 28.
The development of new-type memristors with special performance is of great interest. Herein, an inorganic-organic hybrid crystalline polyoxometalate (POM) with usual dynamic structures is reported and used as active material for fabricating memristor with unique temperature-regulated resistive switching behaviors. The hybrid POM not only exhibits tunable thermochromic properties, but also thermal-induced reversible aggregation and disaggregation reactions, leading to reversible structural transformations in SCSC fashion. Further, the memory device using the hybrid POM as active layer exhibits uncommon performance, which can keep resistive switching silent in the low temperature range of 30-150 °C, but show nonvolatile memory behavior in the high temperature range of 150-270 °C. Particularly, the silent and working states at three special temperatures (30, 150 and 270 °C) can be monitored by chromism. The correlation between structure and resistive switching property of the material has been discussed. The work demonstrates that crystalline inorganic-organic hybrid POMs are promising materials for making memristors with superior performance.
开发具有特殊性能的新型忆阻器引起了人们极大的兴趣。在此，报道了一种具有常见动态结构的无机-有机杂化结晶多金属氧酸盐（POM），并将其用作活性材料来制造具有独特温度调节电阻开关行为的忆阻器。这种杂化POM不仅表现出可调的热致变色特性，还具有热诱导的可逆聚集和解聚反应，导致以SCSC方式进行可逆的结构转变。此外，使用该杂化POM作为活性层的存储器件表现出不同寻常的性能，它在30-150°C的低温范围内可保持电阻开关沉默，但在150-270°C的高温范围内表现出非易失性存储行为。特别地，在三个特殊温度（30、150和270°C）下的沉默和工作状态可以通过变色来监测。讨论了该材料的结构与电阻开关性能之间的相关性。这项工作表明，结晶无机-有机杂化POM是制造具有优异性能忆阻器的有前途的材料。
