High Temperature CsPbBrI Memristors Based on Hybrid Electrical and Optical Resistive Switching Effects.

The emergence of perovskite-based memristors associated with the migration of ions has attracted attention for use in overcoming the limitations of the von Neumann computing architecture and removing the bottleneck of storage density. However, systematic research on the temperature dependence of halide perovskite-based memristors is still required due to the unavoidable thermal stability limits. In this work, mixed halide CsPbBrI-based ( = 0, 1, 2) memristors with unique electrical and optical resistive switching properties in an ambient atmosphere from room temperature to a 240 °C maximum have been successfully achieved. At room temperature, the CsPbBrI-based memristors exhibit outstanding resistive switching behaviors such as ultralow operating voltage (∼0.81, ∼0.64, and ∼0.54 V for different devices, respectively), moderate ON/OFF ratio (∼10), stable endurance (10 cycles), and long retention time (10 s). The CsPbBrI-based memristors maintain excellent repeatability and stability at high temperature. Endurance failures of CsPbI, CsPbBrI, and CsPbBrI memristors occur at 90, 150, and 270 °C, respectively. Finally, nonvolatile imaging employing CsPbBrI-based memristor arrays based on the electrical-write and optical-erase operation at 100 °C has been demonstrated. This study provides utilization potentiality in the high temperature scenarios for perovskite wearable and large-scale information devices.