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具有聚对二甲苯涂层的晶圆键合制造的电容式微机械超声换能器(CMUT)器件。

Wafer-Bonding Fabricated CMUT Device with Parylene Coating.

作者信息

He Changde, Zhang Binzhen, Xue Chenyang, Zhang Wendong, Zhang Shengdong

机构信息

School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.

Institute of Microelectronics, Peking University, Beijing 100871, China.

出版信息

Micromachines (Basel). 2021 May 4;12(5):516. doi: 10.3390/mi12050516.

Abstract

The advantages of the capacitive micromachined ultrasound transducer (CMUT) technology have provided revolutionary advances in ultrasound imaging. Extensive research on CMUT devices for high-frequency medical imaging applications has been conducted because of strong demands and fabrication realization by using standard silicon IC fabrication technology. However, CMUT devices for low-frequency underwater imaging applications have been rarely researched because it is difficult to fabricate thick membrane structures through depositing processes using standard IC fabrication technology due to stress-related problems. To address this shortcoming, in this paper, a CMUT device with a 2.83-μm thick silicon membrane is proposed and fabricated. The CMUT device is fabricated using silicon fusion wafer-bonding technology. A 5-μm thick Parylene-C is conformally deposited on the device for immersion measurement. The results show that the fabricated CMUT can transmit an ultrasound wave, receive an ultrasound wave, and have pulse-echo measurement capability. The ability of the device to emit and receive ultrasonic waves increases with the bias voltage but does not depend on the voltage polarity. The results demonstrate the viability of the fabricated CMUT in low-frequency applications from the perspectives of the device structure, fabrication, and characterization. This study presents the potential of the CMUT for underwater ultrasound imaging applications.

摘要

电容式微机电超声换能器(CMUT)技术的优势为超声成像带来了革命性的进展。由于对高频医学成像应用的强烈需求以及采用标准硅集成电路制造技术实现制造,人们对用于高频医学成像应用的CMUT器件进行了广泛研究。然而,用于低频水下成像应用的CMUT器件却很少被研究,因为使用标准集成电路制造技术通过沉积工艺制造厚膜结构存在与应力相关的问题,难度较大。为了解决这一缺点,本文提出并制造了一种具有2.83μm厚硅膜的CMUT器件。该CMUT器件采用硅融合晶圆键合技术制造。在器件上共形沉积了一层5μm厚的聚对二甲苯-C用于浸没测量。结果表明,制造的CMUT能够发射超声波、接收超声波并具有脉冲回波测量能力。该器件发射和接收超声波的能力随偏置电压增加,但不取决于电压极性。从器件结构、制造和表征的角度来看,这些结果证明了制造的CMUT在低频应用中的可行性。本研究展示了CMUT在水下超声成像应用中的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2746/8147958/7a57cd58830d/micromachines-12-00516-g001.jpg

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