溅射法制备的钴共掺杂镧钡铜氧化物薄膜的高温电学性能

High Temperature Electrical Properties of Co-Substituted LaBaCuO Thin Films Fabricated by Sputtering Method.

作者信息

Shin Woosuck, Tsuruta Akihiro, Itoh Toshio, Akamatsu Takafumi, Terasaki Ichiro

机构信息

National Institute of Advanced Industrial Science and Technology (AIST), Shimo-Shidami, Moriyama-ku, Nagoya 463-8560, Japan.

Department of Physics, Nagoya University, Furocho, Chikusa-ku, Nagoya 464-8602, Japan.

出版信息

Materials (Basel). 2021 May 20;14(10):2685. doi: 10.3390/ma14102685.

DOI:10.3390/ma14102685

PMID:34065486

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8161196/

Abstract

The high-temperature conductivity of the perovskite oxides of a LaBaCuO (LBCO) thin film prepared by RF sputtering deposition and thermal annealing has been studied. While the bulk LBCO compound was metallic, the LBCO film deposited on a Si substrate by sputtering and a post annealing process showed semiconductor-like conduction, which is considered to be due to the defects and poor grain connectivity in the LBCO film on the Si substrate. The LBCO film deposited on a SrTiO substrate was of high film quality and showed metallic conduction. When the cation site Cu was substituted by Co, the electrical conductivity of the LBCO film increased further and its temperature dependence became smaller. The transport properties of LBCO films are investigated to understand its carrier generation mechanism.

摘要

对通过射频溅射沉积和热退火制备的LaBaCuO（LBCO）薄膜钙钛矿氧化物的高温电导率进行了研究。虽然块状LBCO化合物是金属性的，但通过溅射和后退火工艺沉积在硅衬底上的LBCO薄膜表现出类似半导体的传导，这被认为是由于硅衬底上LBCO薄膜中的缺陷和较差的晶粒连通性所致。沉积在SrTiO衬底上的LBCO薄膜具有高质量且表现出金属传导。当阳离子位点Cu被Co取代时，LBCO薄膜的电导率进一步增加且其温度依赖性变小。对LBCO薄膜的输运性质进行了研究以了解其载流子产生机制。