拓扑绝缘体与平凡相和真空界面处形成的电子态之间的区别。

Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum.

作者信息

Kazakov A S, Galeeva A V, Artamkin A I, Ikonnikov A V, Ryabova L I, Dvoretsky S A, Mikhailov N N, Bannikov M I, Danilov S N, Khokhlov D R

机构信息

Physics Department, M.V. Lomonosov Moscow State University, Moscow, 119991, Russia.

Chemistry Department, M.V. Lomonosov Moscow State University, Moscow, 119991, Russia.

出版信息

Sci Rep. 2021 Jun 2;11(1):11638. doi: 10.1038/s41598-021-91141-2.

DOI:10.1038/s41598-021-91141-2

PMID:34079020

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8172881/

Abstract

In this paper, we show that electron states formed in topological insulators at the interfaces topological phase-trivial phase and topological phase-vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological HgCdTe films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film-trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film-vacuum.

摘要

在本文中，我们表明，拓扑绝缘体在拓扑相 - 平凡相和拓扑相 - 真空界面处形成的电子态可能具有不同的性质。这在基于厚拓扑HgCdTe薄膜的异质结构示例中得到了证明，其中观察到了PT对称太赫兹光电导率。结果表明，该效应源于界面拓扑薄膜 - 平凡缓冲层/帽层的特性。PT对称太赫兹光电导率并非由拓扑薄膜 - 真空界面处形成的电子态产生。