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一种基于体偏置技术的 28nm FD-SOI CMOS 工艺中具有 50% SPAD 后脉冲降低的超快主动淬灭主动复位电路。

An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique.

机构信息

ICube Research Institute, University of Strasbourg and CNRS, 23 Rue du Loess, CEDEX, 67037 Strasbourg, France.

Univ Lyon, INSA Lyon, CNRS, INL, UMR5270, 69100 Villeurbanne, France.

出版信息

Sensors (Basel). 2021 Jun 10;21(12):4014. doi: 10.3390/s21124014.

DOI:10.3390/s21124014
PMID:34200801
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8230464/
Abstract

An ultrafast Active Quenching-Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology. By exploiting the body biasing technique, the avalanche is detected very quickly and, consequently, is quenched very fast. The fast quenching decreases the avalanche charges, therefore resulting in the afterpulsing reduction. Both post-layout and experimental results are presented and are highly in accordance with each other. It is shown that the proposed AQAR circuit is able to detect the avalanche in less than 40 ps and reduce the avalanche charge and the afterpulsing up to 50%.

摘要

提出了一种用于单光子雪崩二极管(SPAD)后脉冲降低的超快速主动熄灭-主动重置(AQAR)电路。该电路采用 28nm 全耗尽绝缘体上硅(FD-SOI)CMOS 技术设计。通过利用体偏置技术,可以非常快速地检测到雪崩,并因此非常快速地熄灭。快速熄灭会减少雪崩电荷,从而降低后脉冲。本文给出了布局后和实验结果,两者高度吻合。结果表明,所提出的 AQAR 电路能够在不到 40ps 的时间内检测到雪崩,并将雪崩电荷和后脉冲降低 50%。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/b906f7be2bc8/sensors-21-04014-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/9d670d86b8bd/sensors-21-04014-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/1601d57862f2/sensors-21-04014-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/380967ccafdf/sensors-21-04014-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/f8dd619a52d3/sensors-21-04014-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/32f073d7ae97/sensors-21-04014-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/640934c22944/sensors-21-04014-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/aaf5d99b3b90/sensors-21-04014-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/0384b4f20c62/sensors-21-04014-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/6662ed64d4e8/sensors-21-04014-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/0a6a100c0014/sensors-21-04014-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/6d244d43e72a/sensors-21-04014-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/8f667a1928d9/sensors-21-04014-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/b906f7be2bc8/sensors-21-04014-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/9d670d86b8bd/sensors-21-04014-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/1601d57862f2/sensors-21-04014-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/380967ccafdf/sensors-21-04014-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/f8dd619a52d3/sensors-21-04014-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/32f073d7ae97/sensors-21-04014-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/640934c22944/sensors-21-04014-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/aaf5d99b3b90/sensors-21-04014-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/0384b4f20c62/sensors-21-04014-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/6662ed64d4e8/sensors-21-04014-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/0a6a100c0014/sensors-21-04014-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/6d244d43e72a/sensors-21-04014-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/8f667a1928d9/sensors-21-04014-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ca/8230464/b906f7be2bc8/sensors-21-04014-g013.jpg

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本文引用的文献

1
Avalanche photodiodes and quenching circuits for single-photon detection.用于单光子探测的雪崩光电二极管和猝灭电路。
Appl Opt. 1996 Apr 20;35(12):1956-76. doi: 10.1364/AO.35.001956.