Kria Mohamed, Hamdaoui Jawad El, Pérez Laura M, Prasad Vinod, El-Yadri Mohamed, Laroze David, Feddi El Mustapha
Department of Physics and Astrophysics, University of Delhi, Delhi-110007, India.
Department of Physics, Kalindi College, University of Delhi, Delhi-110008, India.
Nanomaterials (Basel). 2021 Jun 8;11(6):1513. doi: 10.3390/nano11061513.
We have studied the parallel and perpendicular electric field effects on the system of SiGe prolate and oblate quantum dots numerically, taking into account the wetting layer and quantum dot size effects. Using the effective-mass approximation in the two bands model, we computationally calculated the extensive variation of dipole matrix (DM) elements, bandgap and non-linear optical properties, including absorption coefficients, refractive index changes, second harmonic generation and third harmonic generation as a function of the electric field, wetting layer size and the size of the quantum dot. The redshift is observed for the non-linear optical properties with the increasing electric field and an increase in wetting layer thickness. The sensitivity to the electric field toward the shape of the quantum dot is also observed. This study is resourceful for all the researchers as it provides a pragmatic model by considering oblate and prolate shaped quantum dots by explaining the optical and electronic properties precisely, as a consequence of the confined stark shift and wetting layer.
我们通过数值方法研究了平行和垂直电场对SiGe扁长形和扁圆形量子点系统的影响,同时考虑了润湿层和量子点尺寸效应。在双能带模型中使用有效质量近似,我们通过计算得出了偶极矩矩阵(DM)元素、带隙和非线性光学性质的广泛变化,包括吸收系数、折射率变化、二次谐波产生和三次谐波产生随电场、润湿层尺寸和量子点尺寸的变化情况。随着电场增加和润湿层厚度增加,非线性光学性质出现红移。还观察到量子点形状对电场的敏感性。这项研究对所有研究人员都很有帮助,因为它通过精确解释光学和电子性质,考虑了扁圆形和扁长形量子点,提供了一个实用模型,这是受限斯塔克位移和润湿层的结果。