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SiO/GeO薄膜在Si(100)衬底上的生长与结晶

Growth and Crystallization of SiO/GeO Thin Films on Si(100) Substrates.

作者信息

Antoja-Lleonart Jordi, Ocelík Václav, Zhou Silang, de Hond Kit, Koster Gertjan, Rijnders Guus, Noheda Beatriz

机构信息

Nanostructures of Functional Oxides, Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen, The Netherlands.

MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7522 NH Enschede, The Netherlands.

出版信息

Nanomaterials (Basel). 2021 Jun 23;11(7):1654. doi: 10.3390/nano11071654.

Abstract

The growth of α-quartz-based piezoelectric thin films opens the door to higher-frequency electromechanical devices than those available through top-down approaches. We report on the growth of SiO2/GeO2 thin films by pulsed laser deposition and their subsequent crystallization. By introducing a devitrifying agent uniformly within the film, we are able to obtain the α-quartz phase in the form of platelets with lateral sizes above 100 μm at accessible temperatures. Films containing different amounts of devitrifying agent are investigated, and their crystallinity is ascertained with X-ray diffraction and electron back-scatter diffraction. Our work highlights the difficulty in crystallization when competing phases arise that have markedly different crystalline orientation.

摘要

基于α-石英的压电薄膜的生长为制造比通过传统自上而下方法所能实现的更高频率的机电设备打开了大门。我们报道了通过脉冲激光沉积法生长SiO₂/GeO₂薄膜及其随后的结晶过程。通过在薄膜中均匀引入失透剂,我们能够在可达到的温度下获得横向尺寸超过100μm的片状α-石英相。研究了含有不同量失透剂的薄膜,并用X射线衍射和电子背散射衍射确定了它们的结晶度。我们的工作突出了当出现具有明显不同晶体取向的竞争相时结晶的困难。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36c2/8305750/e316fac3faef/nanomaterials-11-01654-g001.jpg

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