Lee Seunghwan, Baek GeonHo, Kim Hye-Mi, Kim Yong-Hwan, Park Jin-Seong
Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
Division of Nano-Scale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
Dalton Trans. 2021 Jul 21;50(28):9958-9967. doi: 10.1039/d1dt01380g.
Area selective atomic layer deposition (AS-ALD) is a promising future technology for the realization of a 5 nm scale Si complementary field effect transistor (FET) and its application in industry. AS-ALD is one of the "bottom-up" technologies, which is a key process that can reduce the cost of fabrication and decrease positional error as an alternative to the conventional "top down" technology. We researched an inhibitor for AS-ALD using molecular layer deposited (MLD) films annealed by electron beam irradiation (EBI). We studied the effect of EBI on an indicone film that was fabricated by using bis(trimethylsilyl)amidodiethyl indium (INCA-1), hydroquinone (HQ), an alucone film fabricated by using trimethylaluminum (TMA) and 4-mercaptophenol (4MP). The EBI effect on MLD films was evaluated by investigating the changes in thickness, composition and structure. In order to observe the selectivity of the annealed indicone film, atomic layer deposition of ZnO was performed on the annealed indicone/silicon line pattern, and it was found that the surface of annealed indicone can inhibit ALD of ZnO for 20 cycles as compared to a Si surface.
区域选择性原子层沉积（AS-ALD）是一种很有前景的未来技术，可用于实现5纳米规模的硅互补场效应晶体管（FET）及其在工业中的应用。AS-ALD是“自下而上”的技术之一，作为传统“自上而下”技术的替代方案，它是一种能够降低制造成本并减少位置误差的关键工艺。我们研究了一种用于AS-ALD的抑制剂，该抑制剂采用通过电子束辐照（EBI）退火的分子层沉积（MLD）膜。我们研究了EBI对使用双（三甲基硅基）氨基二乙基铟（INCA-1）、对苯二酚（HQ）制备的铟锥膜，以及对使用三甲基铝（TMA）和4-巯基苯酚（4MP）制备的铝锥膜的影响。通过研究厚度、成分和结构的变化来评估EBI对MLD膜的影响。为了观察退火铟锥膜的选择性，在退火铟锥/硅线图案上进行了ZnO的原子层沉积，结果发现，与硅表面相比，退火铟锥的表面能够抑制ZnO的原子层沉积20个循环。
