Zhou Shenghan, Chen Ke, Cole Matthew Thomas, Li Zhenjun, Li Mo, Chen Jun, Lienau Christoph, Li Chi, Dai Qing
CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Adv Mater. 2021 Sep;33(35):e2101449. doi: 10.1002/adma.202101449. Epub 2021 Jul 8.
The search for ever higher frequency information processing has become an area of intense research activity within the micro, nano, and optoelectronics communities. Compared to conventional semiconductor-based diffusive transport electron devices, electron tunneling devices provide significantly faster response times due to near-instantaneous tunneling that occurs at sub-femtosecond timescales. As a result, the enhanced performance of electron tunneling devices is demonstrated, time and again, to reimagine a wide variety of traditional electronic devices with a variety of new "lightwave electronics" emerging, each capable of reducing the electron transport channel transit time down to attosecond timescales. In response to unprecedented rapid progress within this field, here the current state-of-the-art in electron tunneling devices is reviewed, current challenges and opportunities are highlighted, and possible future research directions are identified.
对更高频率信息处理的探索已成为微米、纳米和光电子领域内一项活跃的研究领域。与传统的基于半导体的扩散传输电子器件相比，电子隧穿器件由于在亚飞秒时间尺度上发生的近乎瞬时的隧穿而具有显著更快的响应时间。因此，电子隧穿器件的性能不断得到提升，催生了各种新型的“光波电子学”，一次次地重塑了各类传统电子器件，每种新型器件都能将电子传输通道的渡越时间缩短至阿秒时间尺度。鉴于该领域取得了前所未有的快速进展，本文对电子隧穿器件的当前技术水平进行了综述，强调了当前面临的挑战和机遇，并确定了未来可能的研究方向。
