Institute for Electric Light Sources, Department of Light Sources and Illuminating Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, P. R. China.
Nanoscale Horiz. 2021 Sep 1;6(9):718-728. doi: 10.1039/d1nh00064k. Epub 2021 Jul 13.
At present, mainstream neuromorphic hardware is based on artificial synapses; however, an engram, instead of a synapse, has recently been confirmed as the basic unit of memory, which verifies the engram theory proposed by Richard Semon in 1904. Here, we demonstrate an artificial engram device based on a nanoimprinted curable resin. The variation in the relative diffraction efficiency based on the asymmetric reversible topological change of the nanoimprinted resin enables the device to meet all the requirements for artificial engrams, including synaptic plasticity, long memory storage time, asymmetric memorizing-forgetting behaviour and measurable changes and responses. On this basis, we demonstrate the concept of realizing memory formation, memory manipulation and implantation, and memory consolidation using our artificial engram device in comparison with its biological counterpart.
目前，主流的神经形态硬件基于人工突触；然而，最近已经证实，记忆的基本单位是记忆痕迹，而不是突触，这验证了理查德·西蒙（Richard Semon）在 1904 年提出的记忆痕迹理论。在这里，我们展示了一种基于纳米压印可固化树脂的人工记忆痕迹设备。基于纳米压印树脂的不对称可逆拓扑变化的相对衍射效率的变化使该设备满足了人工记忆痕迹的所有要求，包括突触可塑性、长记忆存储时间、不对称记忆遗忘行为以及可测量的变化和响应。在此基础上，我们使用人工记忆痕迹设备展示了与生物对应物相比实现记忆形成、记忆操作和植入以及记忆巩固的概念。
