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探究突触记忆体结构可塑性。

Interrogating structural plasticity among synaptic engrams.

机构信息

School of Biological Sciences, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, South Korea.

School of Biological Sciences, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, South Korea.

出版信息

Curr Opin Neurobiol. 2022 Aug;75:102552. doi: 10.1016/j.conb.2022.102552. Epub 2022 May 19.

Abstract

Our daily experiences and learnings are stored in the form of memories. These experiences trigger synaptic plasticity and persistent structural and functional changes in neuronal synapses. Recently, cellular studies of memory storage and engrams have emerged over the last decade. Engram cells reflect interconnected neurons via modified synapses. However, we were unable to observe the structural changes arising from synaptic plasticity in the past, because it was not possible to distinguish the synapses between engram cells. To overcome this barrier, dual-eGRASP (enhanced green fluorescent protein reconstitution across synaptic partners) technology can label specific synapses among multiple synaptic ensembles. Selective labeling of engram synapses elucidated their role by observing the structural changes in synapses according to the memory state. Dual-eGRASP extends cellular level engram studies to introduce the era of synaptic level studies. Here, we review this concept and possible applications of the dual-eGRASP, including recent studies that provided visual evidence of structural plasticity at the engram synapse.

摘要

我们的日常经历和学习以记忆的形式存储。这些经历引发了突触可塑性和神经元突触的持久结构和功能变化。最近,过去十年中出现了关于记忆存储和记忆印痕的细胞研究。记忆印痕细胞通过改变的突触反映相互连接的神经元。然而,在过去,我们无法观察到由突触可塑性引起的结构变化,因为无法区分记忆印痕细胞之间的突触。为了克服这一障碍,双-eGRASP(增强型绿色荧光蛋白在突触伴侣之间的重建)技术可以标记多个突触集合中的特定突触。通过根据记忆状态观察突触的结构变化,选择性标记记忆印痕细胞阐明了它们的作用。双-eGRASP 将细胞水平的记忆印痕研究扩展到引入突触水平研究的时代。在这里,我们回顾了双-eGRASP 的这一概念和可能的应用,包括最近提供记忆印痕突触结构可塑性的视觉证据的研究。

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