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卤代乙腈 - 锗氟配合物的结构与能量性质

Structural and Energetic Properties of Haloacetonitrile - GeF Complexes.

作者信息

Waller Anna W, Weiss Nicole M, Decato Daniel A, Phillips James A

机构信息

Department of Chemistry, University of Wisconsin-Eau Claire Eau Claire, WI 54702.

Department of Chemistry and Biochemistry, University of Montana,Missoula, MT 59812.

出版信息

J Mol Struct. 2017 Feb 15;1130:984-993. doi: 10.1016/j.molstruc.2016.10.072. Epub 2016 Oct 26.

Abstract

The 1:1 and 2:1 complexes of FCHCN and ClCHCN with GeF have been investigated by M06/aug-cc-pVTZ calculations, low-temperature, thin-film IR spectroscopy, and an x-ray structure has been obtained for (FCHCN)-GeF. Theoretical structures and binding energies for FCHCN-GeF and ClCHCN-GeF demonstrate that halogen substitution significantly weakens the Ge-N dative bonds. The Ge-N distances for the F-and Cl-complexes (2.447 and 2.407 Å, respectively) are about 0.2 Å longer than in CHCN-GeF, and the binding energies (6.5 and 6.9 kcal/mol) are 2 to 3 kcal/mol less. Furthermore, the Ge-N potential curves are flatter for the halogenated complexes, exhibit a greater response to dielectric media, and thus these systems are more prone to structural change in condensed-phases. For the 2:1 complexes, experimental and theoretical structure and frequency data are consistent with differences in the (calculated) gas-phase and solid-state structures. For (FCHCN)-GeF the calculated gas-phase structure has Ge-N distances about 0.3 Å longer those in the x-ray structure (2.366 Å vs. 2.059 Å (ave)). Also, low-temperature IR spectra of CHCN/GeF, FCHCN/GeF and ClCHCN/GeF thin films are consistent with the presence of 2:1 nitrile:GeF complexes, and the splitting patterns of the GeF-stretching bands (~700 cm) match predictions for the corresponding complexes, but are red-shifted relative to the gas-phase predictions, and reflect Ge-N bonds that are compressed in the solid-state, relative to predicted gas-phase structures.

摘要

通过M06/aug-cc-pVTZ计算、低温薄膜红外光谱对FCHCN和ClCHCN与GeF的1:1和2:1配合物进行了研究,并获得了(FCHCN)-GeF的X射线结构。FCHCN-GeF和ClCHCN-GeF的理论结构和结合能表明,卤素取代显著削弱了Ge-N配位键。F-和Cl-配合物的Ge-N距离(分别为2.447 Å和2.407 Å)比CHCN-GeF中的长约0.2 Å,结合能(6.5和6.9 kcal/mol)少2至3 kcal/mol。此外,卤化配合物的Ge-N势能曲线更平坦,对介电介质的响应更大,因此这些体系在凝聚相中更易发生结构变化。对于2:1配合物,实验和理论结构及频率数据与(计算出的)气相和固态结构的差异一致。对于(FCHCN)-GeF,计算出的气相结构中Ge-N距离比X射线结构中的长约0.3 Å(2.366 Å对2.059 Å(平均))。此外,CHCN/GeF、FCHCN/GeF和ClCHCN/GeF薄膜的低温红外光谱与2:1腈:GeF配合物的存在一致,GeF伸缩带(~700 cm)的分裂模式与相应配合物的预测相符,但相对于气相预测发生了红移,反映出相对于预测的气相结构,固态中的Ge-N键被压缩。

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