Zhang Qianyang, Hou Linlin, Lu Yang, Chen Jun, Zhou Yingqiu, Shautsova Viktoryia, Warner Jamie H
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom.
Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States.
ACS Appl Mater Interfaces. 2021 Jul 28;13(29):34696-34704. doi: 10.1021/acsami.1c05136. Epub 2021 Jul 19.
The key to unlocking the full potential of two-dimensional (2D) materials in ultrathin opto-electronics is their layer-by-layer integration and the ability to produce them on the wafer scale using traditional industry-compatible technology. Here, we demonstrate a novel stacking method for assembling uniform-patterned periodic 2D arrays into vertical-layered heterostructures. The fabricated heterostructure can serve as photodetectors, with graphene electrodes and transition-metal dichalcogenides as the photo-absorber. All 2D materials used are grown into continuous films with only mono- or bilayer thickness. Each layer is prepatterned into a specific shape on a substrate and then transferred to the device substrate with aligned precision. In order to achieve long-range alignment across the wafer, interlocking marker pairs are used to help guide the lateral accuracy and reduce rotational error. We show hundreds of identical devices produced with 2D periodic spacing on a 1 cm × 1 cm SiO/Si substrate, a fundamental prerequisite for future pixelated detectors. Statistics of the photovoltaic performance of the devices are reported, with values that are comparable to devices made by chemical vapor deposition-grown materials. Our work provides pathways for the large-scale fabrication of ultrathin all-2D opto-electronics that form the basis of the future in 2D-pixelated cameras and displays.
在超薄光电器件中释放二维（2D）材料全部潜力的关键在于它们的逐层集成，以及使用与传统工业兼容的技术在晶圆规模上生产它们的能力。在此，我们展示了一种新颖的堆叠方法，用于将均匀图案化的周期性二维阵列组装成垂直层状异质结构。所制备的异质结构可用作光电探测器，其中石墨烯电极和过渡金属二硫属化物作为光吸收体。所有使用的二维材料都生长成仅具有单层或双层厚度的连续薄膜。每层在衬底上预先图案化为特定形状，然后以精确对齐的方式转移到器件衬底上。为了在整个晶圆上实现长距离对齐，使用互锁标记对来帮助引导横向精度并减少旋转误差。我们展示了在1 cm×1 cm的SiO/Si衬底上以二维周期性间距生产的数百个相同器件，这是未来像素化探测器的一个基本前提。报告了器件光伏性能的统计数据，其值与通过化学气相沉积生长的材料制成的器件相当。我们的工作为大规模制造超薄全二维光电器件提供了途径，这些器件构成了未来二维像素化相机和显示器的基础。
