Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , U.K.
ACS Appl Mater Interfaces. 2018 Apr 18;10(15):13002-13010. doi: 10.1021/acsami.8b01038. Epub 2018 Apr 9.
Tin disulfide crystals with layered two-dimensional (2D) sheets are grown by chemical vapor deposition using a novel precursor approach and integrated into all 2D transistors with graphene (Gr) electrodes. The Gr:SnS:Gr transistors exhibit excellent photodetector response with high detectivity and photoresponsivity. We show that the response of the all 2D photodetectors depends upon charge trapping at the interface and the Schottky barrier modulation. The thickness-dependent SnS measurements in devices reveal a transition from the interface-dominated response for thin crystals to bulklike response for the thicker SnS crystals, showing the sensitivity of devices fabricated using layered materials on the number of layers. These results show that SnS has photosensing performance when combined with Gr electrodes that is comparable to other 2D transition metal dichalcogenides of MoS and WS.
采用一种新型前驱体方法，通过化学气相沉积生长出具有层状二维（2D）片层的二硫化锡晶体，并将其集成到具有石墨烯（Gr）电极的所有 2D 晶体管中。Gr：SnS：Gr 晶体管表现出优异的光电探测器响应，具有高灵敏度和光响应率。我们表明，所有 2D 光电探测器的响应取决于界面处的电荷俘获和肖特基势垒调制。器件中厚度相关的 SnS 测量表明，对于较薄的晶体，从界面主导的响应转变为较厚的 SnS 晶体的块状响应，这表明使用层状材料制造的器件对层的数量敏感。这些结果表明，当与 Gr 电极结合使用时，SnS 具有与其他二维过渡金属二硫化物 MoS 和 WS 相当的光传感性能。
