Jayan Rahul, Islam Md Mahbubul
Department of Mechanical Engineering, Wayne State University, Detroit, Michigan 48202, United States.
ACS Appl Mater Interfaces. 2021 Aug 4;13(30):35848-35855. doi: 10.1021/acsami.1c10868. Epub 2021 Jul 20.
Room temperature sodium-sulfur (Na-S) batteries, because of their high theoretical energy density and low cost, are considered as a promising candidate for next-generation energy storage devices. However, the practical utilization of the Na-S batteries is greatly hindered by various deleterious factors such as dissolution of sodium polysulfides (NaS) into the electrolyte commonly termed as "shuttle effect," sluggish decomposition of solid NaS, and poor electronic conductivity of sulfur. To overcome the challenges, we introduced single-layer vanadium disulfide (VS) as an anchoring material (AM) to immobilize higher-order polysulfides from the dissolution and also to accelerate the otherwise sluggish kinetics of insoluble short-chain polysulfides. We employ density functional theory (DFT) calculations to elucidate the NaS interactions at the VS interfaces. We show that the adsorption strengths of various NaS species on the VS basal plane are adequate (1.21-4.3 eV) to suppress the shuttle effect, and the structure of NaS are maintained without any decomposition, which is necessary to mitigate capacity fading. The calculated projected density of states (PDOS) reveals that the metallic character of the pristine VS is retained even after NaS adsorption. The calculated Gibbs free energy of each elementary sulfur reduction reaction indicates a significant decrement in the free energy barrier due to the catalytic activity of the VS surface. Furthermore, VS is found to be an excellent catalyst to significantly reduce the oxidative decomposition barrier of NaS, which facilitates accelerated electrode kinetics and higher utilization of sulfur. Overall, VS with strong adsorption behavior, enhanced electronic conductivity, and improved oxidative decomposition kinetics of polysulfides can be considered as an effective AM to prevent the shuttle effect and to improve the performance of Na-S batteries.
室温钠硫(Na-S)电池因其高理论能量密度和低成本,被认为是下一代储能设备的一个有前途的候选者。然而,Na-S电池的实际应用受到各种有害因素的极大阻碍,如多硫化钠(NaS)溶解到电解质中,通常称为“穿梭效应”、固态NaS分解缓慢以及硫的电子导电性差。为了克服这些挑战,我们引入了单层二硫化钒(VS)作为锚定材料(AM),以固定高阶多硫化物,防止其溶解,并加速原本缓慢的不溶性短链多硫化物的动力学。我们采用密度泛函理论(DFT)计算来阐明VS界面处的NaS相互作用。我们表明,各种NaS物种在VS基面的吸附强度足以(1.21-4.3 eV)抑制穿梭效应,并且NaS的结构得以维持而无任何分解,这对于减轻容量衰减是必要的。计算得到的投影态密度(PDOS)表明,即使在吸附NaS后,原始VS的金属特性仍得以保留。每个基本硫还原反应的计算吉布斯自由能表明,由于VS表面的催化活性,自由能垒显著降低。此外,发现VS是一种优异的催化剂,可显著降低NaS的氧化分解势垒,这有助于加速电极动力学并提高硫的利用率。总体而言,具有强吸附行为、增强的电子导电性以及改善的多硫化物氧化分解动力学的VS可被视为一种有效的锚定材料,以防止穿梭效应并提高Na-S电池的性能。