四方相CHNHPbBr钙钛矿单晶的合成、结构、迁移率及忆阻器特性
Synthesis, structure, mobility and memristor properties of tetragonal CHNHPbBr perovskite single crystals.
作者信息
Cui Jiawen, Fu Xuewei, Zhou Huawei, Yin Jie, Wu Mingxing, Zhang Xianxi
机构信息
School of Chemistry and Chemical Engineering; College of Materials Science and Engineering; Shandong Provincial Key Laboratory/Collaborative Innovation Center of Chemical Energy Storage; Liaocheng University, China.
Key Laboratory of Inorganic Nano-materials of Hebei Province, College of Chemistry and Material Science, Hebei Normal University, No. 20 Rd. East of 2nd Ring South, Yuhua District, Shijiazhuang City, Hebei Province 050024, China.
出版信息
Dalton Trans. 2021 Aug 4;50(30):10365-10368. doi: 10.1039/d1dt00492a.
The structure, mobility and memristor properties of tetragonal CH3NH3PbBr3 single crystals (T-MAPbBr3 SC) are rarely reported. In this study, we synthesized T-MAPbBr3 SC with the P4/mmm (123) space group by the growing, dropping and growing (GDG) crystal seed method. A CH3NH3+ cation is a disordered state in T-MAPbBr3 SC. The mobility values of T-MAPbBr3 SC under light and dark conditions are 464.28 and -1685.3 cm2 V-1 s-1, respectively. The carrier types under light and dark conditions are holes and electrons, respectively. The memristor based on T-MAPbBr3 SC has a wide and low operating voltage window (0-0.9 V). The high and low resistances of the memristor based on T-MAPbBr3 SC achieve values of 41 and 0.35 GΩ, respectively. The values of high and low resistances are relatively stable for 100 cycles. Thus, the memristor device based on T-MAPbBr3 SC has good applications in the field of memristors.
四方相CH3NH3PbBr3单晶（T-MAPbBr3 SC）的结构、迁移率和忆阻器特性鲜有报道。在本研究中，我们通过生长-滴落-生长（GDG）晶种法合成了具有P4/mmm（123）空间群的T-MAPbBr3 SC。CH3NH3+阳离子在T-MAPbBr3 SC中处于无序状态。T-MAPbBr3 SC在光照和黑暗条件下的迁移率值分别为464.28和-1685.3 cm2 V-1 s-1。光照和黑暗条件下的载流子类型分别为空穴和电子。基于T-MAPbBr3 SC的忆阻器具有宽且低的工作电压窗口（0-0.9 V）。基于T-MAPbBr3 SC的忆阻器的高电阻和低电阻分别达到41和0.35 GΩ。高电阻和低电阻值在100个循环内相对稳定。因此，基于T-MAPbBr3 SC的忆阻器器件在忆阻器领域具有良好的应用前景。
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