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基于时间分辨瞬态电致发光的红/绿/蓝量子点发光二极管对比研究

Comparative Study of Red/Green/Blue Quantum-Dot Light-Emitting Diodes by Time-Resolved Transient Electroluminescence.

作者信息

Shen Qibin, Hao Yanlei, Ma Luying, Wang Xiaoyu

机构信息

Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.

Center for Chemistry of High-Performance and Novel Materials, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China.

出版信息

J Phys Chem Lett. 2021 Jul 29;12(29):7019-7025. doi: 10.1021/acs.jpclett.1c01560. Epub 2021 Jul 21.

Abstract

To understand the electronic processes in quantum-dot light-emitting diodes (QLEDs), a comparative study was performed by time-resolved transient electroluminescence (TREL). We fabricated red, green, and blue (R-, G-, and B-) QLEDs with poly(9,9-dioctylfluorene---(4--butylphenyl)diphenylamine) as the hole-transporting layer with conventional structures. The external quantum efficiency (EQE) and current efficiency were 19.2% and 22.7 cd A for R-QLEDs, 21.1% and 93.3 cd A for G-QLEDs, and 10.6% and 10.4 cd A for B-QLEDs, respectively. The TREL results for B-QLEDs were remarkably different from those for R- and G-QLEDs because of the insufficient electron injection crossing the type II heterojunction between the emission layer and the electron-transporting layer. We further applied poly(-vinylcarbazole) as the hole-transporting layer and obtained much better performance for B-QLEDs, with EQE and current efficiency of 15.9% and 15.4 cd A, respectively. Concomitant with the increase in EQE are an increase in the turn-on voltage from 2.3 to 3.7 V and a transient electroluminescence spike after voltage turn-off.

摘要

为了理解量子点发光二极管(QLED)中的电子过程,通过时间分辨瞬态电致发光(TREL)进行了一项对比研究。我们采用传统结构,以聚(9,9-二辛基芴-(4-丁基苯基)二苯胺)作为空穴传输层,制备了红色、绿色和蓝色(R-、G-和B-)QLED。R-QLED的外量子效率(EQE)和电流效率分别为19.2%和22.7 cd/A,G-QLED分别为21.1%和93.3 cd/A,B-QLED分别为10.6%和10.4 cd/A。由于电子注入不足,无法穿过发射层与电子传输层之间的II型异质结,B-QLED的TREL结果与R-和G-QLED的结果显著不同。我们进一步应用聚(乙烯基咔唑)作为空穴传输层,B-QLED的性能有了显著提升,EQE和电流效率分别为15.9%和15.4 cd/A。随着EQE的增加,开启电压从2.3 V增加到3.7 V,并且在电压关闭后出现瞬态电致发光尖峰。

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