Ali Khadiza, Fernández Laura, Kherelden Mohammad A, Makarova Anna A, Píš Igor, Bondino Federica, Lawrence James, de Oteyza Dimas G, Usachov Dmitry Yu, Vyalikh Denis V, García de Abajo F Javier, El-Fattah Zakaria M Abd, Ortega J Enrique, Schiller Frederik
Centro de Física de Materiales CSIC/UPV-EHU-Materials Physics Center, San Sebastián, E-20018, Spain.
Universidad del País Vasco, Dpto. Física Aplicada, San Sebastián, E-20018, Spain.
Adv Sci (Weinh). 2021 Sep;8(17):e2101455. doi: 10.1002/advs.202101455. Epub 2021 Jul 22.
Monolayer hexagonal boron nitride (hBN) is attracting considerable attention because of its potential applications in areas such as nano- and opto-electronics, quantum optics and nanomagnetism. However, the implementation of such functional hBN demands precise lateral nanostructuration and integration with other two-dimensional materials, and hence, novel routes of synthesis beyond exfoliation. Here, a disruptive approach is demonstrated, namely, imprinting the lateral pattern of an atomically stepped one-dimensional template into a hBN monolayer. Specifically, hBN is epitaxially grown on vicinal Rhodium (Rh) surfaces using a Rh curved crystal for a systematic exploration, which produces a periodically textured, nanostriped hBN carpet that coats Rh(111)-oriented terraces and lattice-matched Rh(337) facets with tunable width. The electronic structure reveals a nanoscale periodic modulation of the hBN atomic potential that leads to an effective lateral semiconductor multi-stripe. The potential of such atomically thin hBN heterostructure for future applications is discussed.
单层六方氮化硼（hBN）因其在纳米电子学、光电子学、量子光学和纳米磁学等领域的潜在应用而备受关注。然而，要实现这种功能性hBN，需要精确的横向纳米结构化以及与其他二维材料的集成，因此，除了剥离法之外还需要新的合成路线。在此，展示了一种突破性的方法，即将原子级阶梯状一维模板的横向图案压印到hBN单层中。具体而言，使用Rh弯曲晶体在近邻铑（Rh）表面上外延生长hBN，以便进行系统探索，从而产生周期性纹理化的纳米条纹hBN毯，该毯覆盖Rh(111)取向的平台和晶格匹配的Rh(337)小面，且宽度可调。电子结构揭示了hBN原子势的纳米级周期性调制，这导致了有效的横向半导体多条纹。讨论了这种原子级薄的hBN异质结构在未来应用中的潜力。
