Slizovskiy Sergey, Garcia-Ruiz Aitor, Berdyugin Alexey I, Xin Na, Taniguchi Takashi, Watanabe Kenji, Geim Andre K, Drummond Neil D, Fal'ko Vladimir I
National Graphene Institute, University of Manchester, Booth St.E., M13 9PL Manchester, U.K.
Dept. of Physics & Astronomy, University of Manchester, Manchester M13 9PL, U.K.
Nano Lett. 2021 Aug 11;21(15):6678-6683. doi: 10.1021/acs.nanolett.1c02211. Epub 2021 Jul 23.
We describe how the out-of-plane dielectric polarizability of monolayer graphene influences the electrostatics of bilayer graphene-both Bernal (BLG) and twisted (tBLG). We compare the polarizability value computed using density functional theory with the output from previously published experimental data on the electrostatically controlled interlayer asymmetry potential in BLG and data on the on-layer density distribution in tBLG. We show that monolayers in tBLG are described well by polarizability α = 10.8 Å and effective out-of-plane dielectric susceptibility ϵ = 2.5, including their on-layer electron density distribution at zero magnetic field and the interlayer Landau level pinning at quantizing magnetic fields.
我们描述了单层石墨烯的面外介电极化率如何影响双层石墨烯（包括伯纳尔双层石墨烯（BLG）和扭曲双层石墨烯（tBLG））的静电学。我们将使用密度泛函理论计算得到的极化率值与先前发表的关于BLG中静电控制的层间不对称势的实验数据以及tBLG中单层密度分布的数据输出进行了比较。我们表明，tBLG中的单层可以很好地用极化率α = 10.8 Å和有效面外介电常数ϵ = 2.5来描述，包括它们在零磁场下的单层电子密度分布以及在量子化磁场下的层间朗道能级钉扎。
