Nguyen Tuan Kien, Aberoumand Sadegh, Dao Dzung Viet
Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
Infineon Technologies Asia Pacific Pte. Ltd., Singapore, 349253, Singapore.
Small. 2021 Dec;17(49):e2101775. doi: 10.1002/smll.202101775. Epub 2021 Jul 26.
Silicon (Si), as the second most abundant element on Earth, has been a central platform of modern electronics owing to its low mass density and unique semiconductor properties. From an energy perspective, all-in-one integration of power supply systems onto Si-based functional devices is highly desirable, which inspires significant study on Si-based energy storage. Compared to the well-known Si-anode Li-ion batteries, Si-based supercapacitors possess high power density, long life, and simple working mechanisms, which enables their ease of integration onto a wide range of devices and applications. Besides Si, silicon carbide (SiC), as a physicochemically stable wide-bandgap semiconductor, also attracts research attention as an energy storage material in harsh environments. In this review, a detailed overview of latest advances in materials design, synthesis methods, and performances of Si-based and SiC-based supercapacitors will be provided. Some successful integrated devices, future perspectives, and potential research directions are also highlighted and discussed.
硅(Si)作为地球上第二丰富的元素,因其低质量密度和独特的半导体特性,一直是现代电子学的核心平台。从能源角度来看,将电源系统一体化集成到基于硅的功能器件上是非常可取的,这激发了对基于硅的能量存储的大量研究。与广为人知的硅阳极锂离子电池相比,基于硅的超级电容器具有高功率密度、长寿命和简单的工作机制,这使得它们易于集成到广泛的器件和应用中。除了硅之外,碳化硅(SiC)作为一种物理化学性质稳定的宽带隙半导体,作为恶劣环境中的能量存储材料也吸引了研究关注。在这篇综述中,将详细概述基于硅和基于碳化硅的超级电容器在材料设计、合成方法和性能方面的最新进展。还将重点介绍和讨论一些成功的集成器件、未来展望以及潜在的研究方向。