Gavalas Michail, Gallou Yann, Chaussende Didier, Blanquet Elisabeth, Mercier Frédéric, Zekentes Konstantinos
SIMAP, Grenoble INP, University Grenoble Alpes CNRS, 38402 Grenoble, France.
Microelectronics Research Group, IESL/FORTH & University of Crete, 71003 Heraklion, Greece.
Micromachines (Basel). 2025 Feb 27;16(3):276. doi: 10.3390/mi16030276.
The purpose of this paper is to give a review on the state of the art of polycrystalline SiC material grown by low-pressure chemical vapor deposition (LPCVD). Nowadays, LPCVD is the main technique used for the deposition of polycrystalline SiC, both in academic research and industry. Indeed, the LPCVD technique is today the most mature technique to grow high purity polycrystalline thin films with controlled thickness and structure over a large area (>50 cm) and/or 3D substrate. Its ability to have a high degree of modification on the growth conditions and the chosen precursor system allows the deposition of polycrystalline SiC films in various substrates with tailored properties according to the desired application. After a short introduction on the SiC material and its growth by the LPCVD technique, a review of theoretical studies (thermodynamics and kinetics) related to the CVD SiC growth process is given. A synthesis of the experimental studies is made focusing on the effect of the growth conditions on the properties of the deposited SiC polycrystalline material. Despite the numerous results, a full understanding of them is limited due to the complexity of the LPCVD process and the polycrystalline SiC structure. The conclusions show that the growth conditions, like temperature, chamber pressure, (C/Si), (Cl/Si), and doping have an impact on the microstructure and on the corresponding properties of the polycrystalline SiC films. Future perspectives are given in order to improve our understanding on the polycrystalline-SiC-LPCVD process and to enable the growth of tailor-made polycrystalline SiC films for future applications.
本文旨在综述通过低压化学气相沉积（LPCVD）生长的多晶SiC材料的研究现状。如今，LPCVD是学术研究和工业领域中用于沉积多晶SiC的主要技术。事实上，LPCVD技术是目前最成熟的技术，能够在大面积（>50 cm）和/或三维衬底上生长具有可控厚度和结构的高纯度多晶薄膜。其对生长条件和所选前驱体系统具有高度的调控能力，使得能够根据所需应用在各种衬底上沉积具有定制性能的多晶SiC薄膜。在对SiC材料及其通过LPCVD技术生长进行简要介绍之后，本文给出了与CVD SiC生长过程相关的理论研究（热力学和动力学）综述。对实验研究进行了综合，重点关注生长条件对沉积的多晶SiC材料性能的影响。尽管取得了众多成果，但由于LPCVD工艺和多晶SiC结构的复杂性，对这些成果的全面理解仍然有限。结论表明，诸如温度、腔室压力、（C/Si）、（Cl/Si）和掺杂等生长条件会对多晶SiC薄膜的微观结构和相应性能产生影响。为了增进我们对多晶SiC-LPCVD工艺的理解，并实现为未来应用生长定制的多晶SiC薄膜，本文给出了未来展望。
